发明申请
- 专利标题： Thin-film capacitor and method for fabricating the same, electronic device and circuit board
- 专利标题（中）： 薄膜电容器及其制造方法，电子器件和电路板
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申请号： US11393910申请日： 2006-03-31
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公开(公告)号： US20070141800A1公开(公告)日： 2007-06-21
- 发明人: Kazuaki Kurihara , Takeshi Shioga , John Baniecki , Masatoshi Ishii
- 申请人： Kazuaki Kurihara , Takeshi Shioga , John Baniecki , Masatoshi Ishii
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2005-366789 20051220
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
The thin-film capacitor comprises a capacitor part 20 formed over a base substrate 10 and including a first capacitor electrode 14, a capacitor dielectric film 16 formed over the first capacitor electrode 14, and a second capacitor electrode 18 formed over the capacitor dielectric film 16; leading-out electrodes 26a, 26b lead from the first capacitor electrode 14 or the second capacitor electrode 18 and formed of a conducting barrier film which prevents the diffusion of hydrogen or water; and outside connection electrodes 34a, 34b for connecting to outside and connected to the leading-out electrodes 26a, 26b.
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