公开(公告)号：US20070141800A1

公开(公告)日：2007-06-21

申请号：US11393910

申请日：2006-03-31

申请人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki ,  Masatoshi Ishii

发明人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki ,  Masatoshi Ishii

IPC分类号： H01L21/20

CPC分类号： H01L23/5223 ,  H01G4/33 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L28/55 ,  H01L28/65 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05155 ,  H01L2224/05552 ,  H01L2224/0557 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/30105 ,  H01L2924/30107 ,  H05K1/0231 ,  H05K1/162 ,  H05K1/185 ,  H05K2201/0179 ,  H05K2201/09481 ,  H05K2201/10712 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： The thin-film capacitor comprises a capacitor part 20 formed over a base substrate 10 and including a first capacitor electrode 14, a capacitor dielectric film 16 formed over the first capacitor electrode 14, and a second capacitor electrode 18 formed over the capacitor dielectric film 16; leading-out electrodes 26a, 26b lead from the first capacitor electrode 14 or the second capacitor electrode 18 and formed of a conducting barrier film which prevents the diffusion of hydrogen or water; and outside connection electrodes 34a, 34b for connecting to outside and connected to the leading-out electrodes 26a, 26b.

摘要翻译： 薄膜电容器包括形成在基底基板10上并包括第一电容器电极14，形成在第一电容器电极14上的电容器电介质膜16的电容器部分20和形成在电容器电介质膜16上的第二电容器电极18 ; 引出电极26a，26b从第一电容器电极14或第二电容器电极18引出，并由阻止氢或水扩散的导电阻挡膜形成; 以及用于连接到外部并连接到引出电极26a，26b的外部连接电极34a，34b。

公开(公告)号：US20060250749A1

公开(公告)日：2006-11-09

申请号：US11486001

申请日：2006-07-14

申请人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki ,  Mamoru Kurashina

发明人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki ,  Mamoru Kurashina

IPC分类号： H01G4/228

CPC分类号： H01G4/33 ,  H01G4/228 ,  H01L23/3114 ,  H01L23/5223 ,  H01L27/0805 ,  H01L28/57 ,  H01L28/65 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05166 ,  H01L2224/05169

摘要： In one aspect of the invention, in a thin layer capacitor element comprising a capacitor having a dielectric layer made of a metal oxide and a protective insulating layer made of a resin material, a barrier layer made of a non-conductive inorganic material is provided between the capacitor and the protective insulating layer. In another aspect of the invention, a thin layer capacitor element is constituted so that a capacitor structure is covered with at least one protective insulating layer composed of a cured resin, the cured resin being formed from at least one resin precursor selected from the group consisting of thermosetting resins, photosetting resins and thermoplastic resins.

摘要翻译： 在本发明的一个方面中，在由具有由金属氧化物构成的电介质层和由树脂材料构成的保护绝缘层的电容器的薄层电容器元件中，由非导电性无机材料构成的阻挡层 电容器和保护绝缘层。 在本发明的另一方面，薄层电容器元件构成为电容器结构覆盖有由固化树脂构成的至少一个保护绝缘层，所述固化树脂由至少一种选自以下的树脂前体形成： 的热固性树脂，光固化树脂和热塑性树脂。

公开(公告)号：US20060084253A1

公开(公告)日：2006-04-20

申请号：US11250399

申请日：2005-10-17

申请人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John Baniecki

发明人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John Baniecki

IPC分类号： H01L21/20

CPC分类号： H01L24/91 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76801 ,  H01L21/7687 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48132 ,  H01L2224/73267 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/381 ,  H05K3/4602 ,  H05K3/4661 ,  H05K2201/0209 ,  H05K2201/086 ,  H05K2201/09509 ,  H05K2203/0195 ,  H05K2203/0228 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 用切割工具12切割树脂层10的表面部分的步骤; 通过无电解电镀在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 在树脂层10的表面上也不会形成过度的深孔，如通过溶剂处理，可以在树脂层10上形成微粉化图案的光致抗蚀剂膜40。 因此，可以以较窄的间距在树脂层10上形成互连44等，从而确保高可靠性。

公开(公告)号：US20070031590A1

公开(公告)日：2007-02-08

申请号：US11580872

申请日：2006-10-16

申请人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： B05D5/12

CPC分类号： H01L28/56 ,  H01G4/008 ,  H01G4/1209 ,  H01G4/33 ,  H01L27/016 ,  H01L28/65

摘要： The present invention comprises the steps of (a) forming a first electrode on a substrate via an adhesion enhancing layer, (b) forming a capacitor insulating film containing a laminated film, in which an amorphous dielectric film and a polycrystalline dielectric film are laminated via a wave-like interface, by forming sequentially and successively the amorphous dielectric film and the polycrystalline dielectric film made of same material on the first electrode, (c) forming a second electrode on the capacitor insulating film, and (d) a step of annealing the capacitor insulating film in an oxygen atmosphere.

摘要翻译： 本发明包括以下步骤：（a）经由粘合增强层在基板上形成第一电极，（b）形成含有层叠膜的电容绝缘膜，其中非晶绝缘膜和多晶电介质膜经由 波形界面，通过在第一电极上顺序并连续地形成由相同材料制成的非晶介质膜和多晶电介质膜，（c）在电容器绝缘膜上形成第二电极，以及（d）退火步骤 电容器绝缘膜在氧气氛中。

公开(公告)号：US20060211212A1

公开(公告)日：2006-09-21

申请号：US11168547

申请日：2005-06-29

申请人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L21/20

CPC分类号： H01L27/016 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/31658 ,  H01L21/31691 ,  H01L28/55 ,  H01L28/65 ,  H01L2224/16227 ,  H01L2924/15192 ,  H01L2924/15312 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19106

摘要： A capacitive element includes a base member 10, an underlying insulating film 11 formed on the base member 10, a capacitor Q constructed by forming a lower electrode 13, a capacitor dielectric film 14, and an upper electrode 15 sequentially on the underlying insulating film 11, a lower protection insulating film 16a formed on the upper electrode 15 to cover at least a part of the capacitor Q, and an upper protection insulating film 16b formed on the lower protection insulating film 16a and having a wider energy band gap than the lower protection insulating film 16a.

摘要翻译： 电容性元件包括基底构件10，形成在基底构件10上的下面的绝缘膜11，通过在下面的绝缘膜11上依次形成下部电极13，电容器电介质膜14和上部电极15而构成的电容器Q 形成在上电极15上以覆盖电容器Q的至少一部分的下保护绝缘膜16a，以及形成在下保护绝缘膜16a上的上保护绝缘膜16b，其具有比 下保护绝缘膜16a。

公开(公告)号：US20050179128A1

公开(公告)日：2005-08-18

申请号：US11104436

申请日：2005-04-13

申请人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara ,  Yasuo Yamagishi

发明人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara ,  Yasuo Yamagishi

IPC分类号： H01L23/12 ,  H01L21/60 ,  H01L23/31 ,  H01L23/50 ,  H01L23/64 ,  H01L25/00 ,  H01L27/01 ,  H05K1/02 ,  H05K1/18 ,  H01L23/34

CPC分类号： H01L23/50 ,  H01L23/3107 ,  H01L23/642 ,  H01L24/48 ,  H01L24/81 ,  H01L27/016 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19106 ,  H01L2924/30107 ,  H05K1/0231 ,  H05K1/182 ,  H05K2201/10515 ,  H05K2201/1053 ,  H05K2201/10734 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device comprises a carrier substrate, an integrated circuit chip mounted on the carrier substrate via bumps, and a capacitor provided to stabilize operation of the integrated circuit chip at high frequencies. In the semiconductor device, the capacitor is electrically connected to pads on bottom of the integrated circuit chip, and the capacitor is provided to have a height on the carrier substrate that is smaller than or equal to a height of the bumps on the carrier substrate.

公开(公告)号：US20070034989A1

公开(公告)日：2007-02-15

申请号：US11581383

申请日：2006-10-17

申请人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara

IPC分类号： H01L29/00

CPC分类号： H01L28/55 ,  H01G4/33 ,  H01L24/73 ,  H01L27/0805 ,  H01L28/65 ,  H01L28/75 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/1515 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10S257/924 ,  Y10S438/957 ,  Y10T29/435 ,  H01L2924/00012 ,  H01L2924/00

摘要： A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).

摘要翻译： 电容元件的特征在于包括：基座（12）; 形成在所述基座（12）上的下阻挡层（13）; 在此形成下电极（14a），电容器电介质层（15a）和上电极（16a）的电容器（Q 1和Q 2） 在下阻挡层（13）上的顺序; 和覆盖至少所述电容器电介质层（15a）和所述下阻挡层（13）的上阻挡层（20）。

公开(公告)号：US20060255816A1

公开(公告)日：2006-11-16

申请号：US11486053

申请日：2006-07-14

申请人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara

IPC分类号： G01R31/02

CPC分类号： G01R1/07378 ,  G01R31/2886 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/05599

摘要： A probe card including probes, a build-up interconnection layer having a multilayer interconnection structure therein and carrying the probes on a top surface in electrical connection with the multilayer interconnection structure, and a capacitor provided on the build-up interconnection layer in electrical connection with one of the probes via the multilayer interconnection structure, wherein the multilayer interconnection structure includes an inner via-contact in the vicinity of the probe and the capacitor is embedded in a resin insulation layer constituting the build-up layer.

公开(公告)号：US20050161604A1

公开(公告)日：2005-07-28

申请号：US11086909

申请日：2005-03-23

申请人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： G01J1/42 ,  G01J5/02 ,  H01L31/101 ,  H01L37/02

CPC分类号： H01L31/101 ,  G01J1/42 ,  H01L37/02

摘要： An SiO2 layer (3), a Ti layer (4), a Pt layer (5), a PLZT layer (6) and an IrO2 layer (7) are formed sequentially on an Si substrate (2). The IrO2 layer (7) functioning as a top electrode has a thickness of about 100 nm. Since the IrO2 layer (7) has conductivity lower than that of Pt or the like conventionally used as a top electrode and a skin depth deeper than that of Pt or the like, sufficient sensitivity can be attained by a thickness of about 100 nm.

摘要翻译： SiO 2层（3），Ti层（4），Pt层（5），PLZT层（6）和IrO 2层（7） 顺序地形成在Si衬底（2）上。 用作顶部电极的IrO 2层（7）具有约100nm的厚度。 由于IrO 2层（7）的导电率比常规用作顶部电极的Pt等等的电导率低，而且比Pt等的深度更深，因此可以通过 厚度约100nm。

公开(公告)号：US20050146838A1

公开(公告)日：2005-07-07

申请号：US11057193

申请日：2005-02-15

申请人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara

IPC分类号： H01G4/228 ,  H01L21/02 ,  H01L21/60 ,  H01L21/768 ,  H01L27/08 ,  H01G4/06

CPC分类号： H01L27/0805 ,  H01L21/76877 ,  H01L24/11 ,  H01L28/40 ,  H01L2224/06102 ,  H01L2224/1147 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49156

摘要： A capacitor device includes a capacitor Q constituted by a lower electrode (12) formed an a substrate (10), a dielectric film (14), and an upper electrode (16); an insulating film (18) covering the capacitor Q; a first contact hole (18a) formed in the insulating film (18) on a connection portion (16a) of the upper electrode (16); an electrode pad (20) for preventing a diffusion of solder, formed in the first contact hole (18a); and a solder bump (22) electrically connected to the electrode pad (20), and the upper electrode (16) has a protrusion portion (16a) protruding from the dielectric film (14), and is connected to the first contact hole (18a) on the protrusion portion (16a).

摘要翻译： 电容器装置包括由形成有基板（10）的下部电极（12），电介质膜（14）和上部电极（16）构成的电容器Q。 覆盖电容器Q的绝缘膜（18）; 形成在上电极（16）的连接部分（16a）上的绝缘膜（18）中的第一接触孔（18a）; 形成在第一接触孔（18a）中的用于防止焊料扩散的电极焊盘（20）; 和与电极焊盘（20）电连接的焊料凸块（22），上部电极（16）具有从电介质膜（14）突出的突出部（16a），并与第一接触孔 18 a）在突出部分（16a）上。