发明申请
US20070143721A1 SYSTEM AND METHOD FOR PLASMA INDUCED MODIFICATION AND IMPROVEMENT OF CRITICAL DIMENSION UNIFORMITY
有权
等离子体诱导改性的系统与方法及关键尺寸均匀性的改进
- 专利标题： SYSTEM AND METHOD FOR PLASMA INDUCED MODIFICATION AND IMPROVEMENT OF CRITICAL DIMENSION UNIFORMITY
- 专利标题（中）： 等离子体诱导改性的系统与方法及关键尺寸均匀性的改进
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申请号： US11676674申请日： 2007-02-20
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公开(公告)号： US20070143721A1公开(公告)日： 2007-06-21
- 发明人: Timothy Dalton , Ronald Della Guardia , Nicholas Fuller
- 申请人： Timothy Dalton , Ronald Della Guardia , Nicholas Fuller
- 申请人地址： US NY Armonk 10504
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk 10504
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
Novel interconnect structures possessing a OSG or polymeric-based (90 nm and beyond BEOL technologies) in which advanced plasma processing is utilized to reduce post lithographic CD non-uniformity (“line edge roughness”) in semiconductor devices. The novel interconnect structure has enhanced liner and seed conformality and is therefore capable of delivering improved device performance, functionality and reliability.