公开(公告)号：US20070161226A1

公开(公告)日：2007-07-12

申请号：US11328981

申请日：2006-01-10

Applicant: Timothy Dalton ,  Nicholas Fuller ,  Satyanarayana Nitta

Inventor： Timothy Dalton ,  Nicholas Fuller ,  Satyanarayana Nitta

IPC: H01L21/4763

CPC classification number: H01L21/76801 ,  H01L21/76808 ,  H01L21/76829

Abstract: Interconnect structures possessing an organosilicate glass interlayer dielectric material with minimal stoichiometeric modification and optionally an intact organic adhesion promoter for use in semiconductor devices are provided herein. The interconnect structure is capable of delivering improved device performance, functionality and reliability owing to the reduced effective dielectric constant of the stack compared with that of those conventionally employed because of the use of a sacrificial polymeric material deposited onto the dielectric and optional organic adhesion promoter during the barrier open step done prior to ashing the patterning material. This sacrificial film protects the dielectric and optional organic adhesion promoter from modification/consumption during the subsequent ashing step during which the polymeric film is removed.

Abstract translation: 本文提供了具有最小化学计量变化的有机硅酸盐玻璃层间介电材料和任选的用于半导体器件的完整有机粘合促进剂的互连结构。 互连结构能够提供改进的器件性能，功能性和可靠性，因为与常规使用的那些相比，堆叠的有效介电常数降低，因为使用沉积在电介质上的牺牲聚合物材料和任选的有机粘合促进剂 在灰化图案材料之前完成的阻挡层开口步骤。 该牺牲膜在后续的灰化步骤期间保护电介质和任选的有机粘合促进剂免于修饰/消耗，在此期间除去聚合物膜。

公开(公告)号：US20070043742A1

公开(公告)日：2007-02-22

申请号：US11204726

申请日：2005-08-16

Applicant: Juan Arguello ,  Youssef Drissi ,  Nicholas Fuller ,  Ijeoma Nnebe ,  Daby Sow

Inventor： Juan Arguello ,  Youssef Drissi ,  Nicholas Fuller ,  Ijeoma Nnebe ,  Daby Sow

IPC: G06F7/00

CPC classification number: G06F17/30734

Abstract: Systems and methods are provided for building and implementing ontology-based information resources. More specifically, multi-user collaborative, semi-automatic systems and methods are provided for constructing ontology-based information resources that are shared by a community of users, wherein ontology categories evolve over time based on categorization rules that are specified by the community of users as well as categorization rules that are automatically learned from knowledge obtained as a result of multi-user interactions and categorization decisions.

Abstract translation: 提供了构建和实现基于本体的信息资源的系统和方法。 更具体地，提供了多用户协作，半自动系统和方法，用于构建由用户社区共享的基于本体的信息资源，其中本体类别随着时间推移基于由用户社区指定的分类规则 以及根据多用户交互和分类决策所获得的知识自动学习的分类规则。

公开(公告)号：US20070040276A1

公开(公告)日：2007-02-22

申请号：US11207218

申请日：2005-08-19

Applicant: Chih-Chao Yang ,  Lawrence Clevenger ,  Timothy Dalton ,  Nicholas Fuller ,  Louis Hsu

Inventor： Chih-Chao Yang ,  Lawrence Clevenger ,  Timothy Dalton ,  Nicholas Fuller ,  Louis Hsu

IPC: H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC classification number: H01L23/5252 ,  H01L21/76843 ,  H01L21/76844 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An anti-fuse structure that included a buried electrically conductive, e.g., metallic layer as an anti-fuse material as well as a method of forming such an anti-fuse structure are provided. According to the present invention, the inventive anti-fuse structure comprises regions of leaky dielectric between interconnects. The resistance between these original interconnects starts decreasing when two adjacent interconnects are biased and causes a time-dependent dielectric breakdown, TDDB, phenomenon to occur. Decreasing of the resistance between adjacent interconnects can also be expedited via increasing the local temperature.

Abstract translation: 提供了一种抗熔丝结构，其包括掩埋的导电的，例如作为反熔丝材料的金属层以及形成这种抗熔丝结构的方法。 根据本发明，本发明的抗熔丝结构包括互连之间的漏电介质区域。 当两个相邻的互连被偏置时，这些原始互连之间的电阻开始减小，并且引起时间依赖介质击穿TDDB现象。 也可以通过增加局部温度来加速相邻互连之间的电阻的降低。

公开(公告)号：US20060154086A1

公开(公告)日：2006-07-13

申请号：US11034480

申请日：2005-01-13

Applicant: Nicholas Fuller ,  Stephen Gates ,  Timothy Dalton

Inventor： Nicholas Fuller ,  Stephen Gates ,  Timothy Dalton

IPC: B32B17/06 ,  B32B9/00 ,  H01L21/302

CPC classification number: H01L21/0331 ,  H01L21/76811 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/31667 ,  H01L2924/00

Abstract: Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.

Abstract translation: 具有用于90nm以上的有机硅酸盐玻璃基材料的互连结构，其中描述了使用线路优先方法的多层硬掩模的BEOL技术。 本发明的互连结构实现了相应的改进的器件/互连性能，并且由于不暴露OSG材料以抵抗去除等离子体以及由于交替的无机/有机多层硬掩模堆叠而提供了实质的双镶嵌工艺窗口。 后一特征意味着对于在特定蚀刻步骤期间被蚀刻的每个无机层，该领域中相应的图案转移层是有机的，反之亦然。

公开(公告)号：US20080038917A1

公开(公告)日：2008-02-14

申请号：US11873936

申请日：2007-10-17

Applicant: Timothy Dalton ,  Nicholas Fuller ,  Stephen Gates

Inventor： Timothy Dalton ,  Nicholas Fuller ,  Stephen Gates

IPC: H01L21/4763

CPC classification number: H01L21/0331 ,  H01L21/76811 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/31667 ,  H01L2924/00

Abstract: Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.

公开(公告)号：US20070253661A1

公开(公告)日：2007-11-01

申请号：US11415923

申请日：2006-05-01

Applicant: Charles Black ,  Gian-Luca Bona ,  Timothy Dalton ,  Nicholas Fuller ,  Roland Germann ,  Maurice McGlashan-Powell ,  Chandrasekhar Narayan ,  Robert Sandstrom

Inventor： Charles Black ,  Gian-Luca Bona ,  Timothy Dalton ,  Nicholas Fuller ,  Roland Germann ,  Maurice McGlashan-Powell ,  Chandrasekhar Narayan ,  Robert Sandstrom

IPC: G02B6/27 ,  B29D11/00

CPC classification number: G02B6/126 ,  B29D11/00759 ,  G02B6/136 ,  G02B2006/1215

Abstract: A method in effectuating the redirection of light which is propagated within a waveguide, and which eliminates the necessity for a bending of the waveguide, or the drawbacks encountered in directional changes in propagated light involving the need for sharp curves of essentially small-sized radii, which would resultingly lead to excessive losses in light. In this connection, the method relates to the fabricating and the provision of a wire-grid polarization beam splitter within an optical waveguide, which utilizes a diblock copolymer template to formulate the wire-grid.

Abstract translation: 实现在波导内传播的光的重定向并且消除波导的弯曲的必要性的方法或者涉及需要基本上小的半径的尖锐曲线的传播光的方向性变化中遇到的缺点， 这将导致轻微的过度损失。 在这方面，该方法涉及在光波导内制造和提供线栅偏振分束器，其利用二嵌段共聚物模板来配制线栅。

公开(公告)号：US20070143721A1

公开(公告)日：2007-06-21

申请号：US11676674

申请日：2007-02-20

Applicant: Timothy Dalton ,  Ronald Della Guardia ,  Nicholas Fuller

Inventor： Timothy Dalton ,  Ronald Della Guardia ,  Nicholas Fuller

IPC: G06F17/50

CPC classification number: H01L21/31138 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0276 ,  H01L21/31144

Abstract: Novel interconnect structures possessing a OSG or polymeric-based (90 nm and beyond BEOL technologies) in which advanced plasma processing is utilized to reduce post lithographic CD non-uniformity (“line edge roughness”) in semiconductor devices. The novel interconnect structure has enhanced liner and seed conformality and is therefore capable of delivering improved device performance, functionality and reliability.

Abstract translation: 具有OSG或聚合物（90nm及以上的BEOL技术）的新型互连结构，其中采用先进的等离子体处理以减少半导体器件中的后平版印刷光盘不均匀性（“线边缘粗糙度”）。 新颖的互连结构具有增强的衬垫和种子保形性，因此能够提供改进的设备性能，功能性和可靠性。

公开(公告)号：US20070072412A1

公开(公告)日：2007-03-29

申请号：US11162883

申请日：2005-09-27

Applicant: Derren Dunn ,  Nicholas Fuller ,  Catherine Labelle ,  Vincent McGahay ,  Sanjay Mehta ,  Henry Nye III

Inventor： Derren Dunn ,  Nicholas Fuller ,  Catherine Labelle ,  Vincent McGahay ,  Sanjay Mehta ,  Henry Nye III

IPC: H01L21/4763 ,  H01L21/311

CPC classification number: H01L21/31138 ,  H01L21/02118 ,  H01L21/02123 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76831

Abstract: Prevention of damage to an interlevel dielectric (ILD) is provided by forming an opening (e.g., trench) in the ILD, and sputtering a dielectric film onto a sidewall of the opening by overetching into a layer of the dielectric below or within the ILD during forming of the opening. The re-sputtered film protects the sidewall of the opening from subsequent plasma/ash processes and seals the porous dielectric surface along the sidewall and bottom without impacting overall process throughput. A semiconductor structure resulting from the above process is also disclosed.

Abstract translation: 通过在ILD中形成开口（例如，沟槽）来提供对层间电介质（ILD）的损坏的防止，并且通过在ILD内或在ILD内过度蚀刻到电介质层中，将电介质膜溅射到开口的侧壁上 形成开口。 再溅射的膜保护开口的侧壁不受后续的等离子体/灰分过程的影响，并且沿着侧壁和底部密封多孔电介质表面，而不影响整个工艺流程。 还公开了由上述方法得到的半导体结构。

公开(公告)号：US20060105576A1

公开(公告)日：2006-05-18

申请号：US10904608

申请日：2004-11-18

Applicant: Nicholas Fuller ,  Timothy Dalton

Inventor： Nicholas Fuller ,  Timothy Dalton

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/76802 ,  G03F7/427 ,  H01L21/31138

Abstract: A high ion energy and high pressure O2/CO-based plasma for ashing field photoresist material subsequent to via-level damascene processing. The optimized plasma ashing process is performed at greater than approximately 300 mT pressure and ion energy greater than approximately 500 W conditions with an oxygen partial pressure of greater than approximately 85%. The rapid ash rate of the high pressure/high ion energy process and minimal dissociation conditions (no “source” power is applied) allow minimal interaction between the interlevel dielectric and ash chemistry to achieve minimal overall sidewall modification of less than approximately 5 nm.

Abstract translation: 用于经过层级镶嵌处理之后灰化场致光材料的高离子能量和高压O 2 2 / CO基等离子体。 优化的等离子体灰化过程在大于约300mT的压力下进行，离子能量大于约500W条件，氧分压大于约85％。 高压/高离子能量过程的快速灰分速率和最小解离条件（不施加“源”功率）允许层间电介质和灰分化学之间的最小相互作用，以实现小于约5nm的最小总体侧壁修饰。

公开(公告)号：US20050258542A1

公开(公告)日：2005-11-24

申请号：US10845718

申请日：2004-05-14

Applicant: Nicholas Fuller ,  Timothy Dalton

Inventor： Nicholas Fuller ,  Timothy Dalton

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L21/76835 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Interconnect structures possessing a non-porous (dense) low-k organosilicate glass (OSG) film utilizing a porous low-k OSG film as an etch stop layer or a porous low-k OSG film using a non-porous OSG film as a hardmask for use in semiconductor devices are provided herein. The novel interconnect structures are capable of delivering improved device performance, functionality and reliability owing to the reduced effective dielectric constant of the stack compared with that of those conventionally employed and also because of the relatively uniform line heights made feasible by these unique and seemingly counterintuitive features. The present invention also provides a fluorocarbon-based dual damascene etch process that achieves selective etching of a dense low-k OSG films relative to that of a porous low-k OSG film owing to the tunability of the gas-phase fluorine:carbon ratio (gas dissociation) and ion current below a critical threshold and given the larger carbon content of the porous film relative to that of the dense film.

Abstract translation: 具有使用多孔低k OSG膜作为蚀刻停止层的无孔（致密）低k有机硅酸盐玻璃（OSG）膜的互连结构或使用无孔OSG膜作为硬掩模的多孔低k OSG膜 用于半导体器件中。 新颖的互连结构能够提供改进的器件性能，功能和可靠性，这是由于与传统采用的叠层相比，堆叠的有效介电常数降低，并且还因为这些独特且看似违反直觉的特征使得线的高度相对均匀 。 本发明还提供了一种基于碳氟化合物的双镶嵌蚀刻工艺，由于气相氟：碳比的可调性，实现了相对于多孔低k OSG膜的致密低k OSG膜的选择性蚀刻（ 气体离解）和离子电流低于临界阈值，并且给出多孔膜相对于致密膜的碳含量较大。