发明申请
- 专利标题： Method of etching semiconductor device
- 专利标题（中）： 半导体器件蚀刻方法
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申请号： US11709141申请日： 2007-02-22
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公开(公告)号： US20070145003A1公开(公告)日： 2007-06-28
- 发明人: Yoshihide Suzuki , Keiichi Sawai , Noriyuki Saitou , Masaru Miyoshi , Makoto Ishikawa
- 申请人： Yoshihide Suzuki , Keiichi Sawai , Noriyuki Saitou , Masaru Miyoshi , Makoto Ishikawa
- 申请人地址： JP Tokyo JP Osaka-shi
- 专利权人： MITSUBISHI CHEMICAL CORPORATION,SHARP KABUSHIKI KAISHA
- 当前专利权人： MITSUBISHI CHEMICAL CORPORATION,SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo JP Osaka-shi
- 优先权： JP2001-362899 20011128; JP2002-306001 20021021
- 主分类号： C30B33/00
- IPC分类号： C30B33/00
摘要：
In a method of etching a semiconductor device or a liquid crystal device, an etching liquid is prepared to include a solvent, and a solute containing at least iodine, at least one iodine compound and alcohol. The etching liquid is applied to a substrate of the semiconductor device or the liquid crystal device having plural gold columns on a gold layer or gold alloy columns on a gold alloy layer.