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    Etching liquid
    2.
    发明授权
    Etching liquid 失效
    蚀刻液体

    公开(公告)号：US07473380B2

    公开(公告)日：2009-01-06

    申请号：US10301653

    申请日：2002-11-22

    申请人： Yoshihide Suzuki ,  Keiichi Sawai ,  Noriyuki Saitou ,  Masaru Miyoshi ,  Makoto Ishikawa

    发明人： Yoshihide Suzuki ,  Keiichi Sawai ,  Noriyuki Saitou ,  Masaru Miyoshi ,  Makoto Ishikawa

    IPC分类号： C09K13/00 ,  C09K13/06 ,  H01L21/302

    CPC分类号： C23F1/14 ,  C11D1/523 ,  C11D7/10 ,  C11D7/261 ,  C11D11/0047 ,  H01L21/32134

    摘要： An etching liquid contains iodine, an iodine compound and alcohol as solute, and solvent such as water. The etching liquid etches a gold or gold alloy layer formed on the surface of a substrate for a semiconductor device or a liquid crystal device evenly. A plurality of gold or gold alloy columns is formed on the layer. The columns are etched scarcely by the etching liquid. The etching liquid etches the gold or gold alloy layer existing between the columns evenly. The etching liquid may further contain a surfactant.

    摘要翻译： 蚀刻液含有碘，碘化合物和醇作为溶质，溶剂如水。 蚀刻液均匀地蚀刻形成在用于半导体器件或液晶器件的衬底的表面上的金或金合金层。 在该层上形成多个金或金合金柱。 色谱柱几乎不被蚀刻液蚀刻。 蚀刻液均匀地蚀刻柱之间的金或金合金层。 蚀刻液还可以含有表面活性剂。

    Etchant and method of etching
    3.
    发明申请
    Etchant and method of etching 审中-公开
    蚀刻剂和蚀刻方法

    公开(公告)号：US20060189123A1

    公开(公告)日：2006-08-24

    申请号：US11289382

    申请日：2005-11-30

    申请人： Noriyuki Saitou ,  Takuji Yoshida ,  Kazunori Inoue ,  Makoto Ishikawa ,  Yoshio Kamiharaguchi

    发明人： Noriyuki Saitou ,  Takuji Yoshida ,  Kazunori Inoue ,  Makoto Ishikawa ,  Yoshio Kamiharaguchi

    IPC分类号： H01L21/4763 ,  H01L21/302

    CPC分类号： C23F1/44 ,  C23F1/20 ,  C23F1/26 ,  H01L21/32134

    摘要： A fine wiring line profile with satisfactory precision is formed from a multilayer film containing a first layer made of an aluminum alloy and a second layer formed thereon made of a molybdenum-niobium alloy, by simultaneously etching the two layers constituting the multilayer film through only one etching operation while preventing the upper layer from forming overhangs. An etchant for etching a multilayer film containing an aluminum alloy layer formed over a substrate and a molybdenum-niobium alloy layer formed thereon having a niobium content of 2-19% by weight contains an aqueous solution of an acid mixture containing phosphoric acid, nitric acid, and an organic acid; and a method of etching is carried out with this etchant. The etchant preferably has a phosphoric acid concentration Np of 50-75% by weight, a nitric acid concentration Nn of 2-15% by weight, and an acid ingredient concentration defined by Np+(98/63)Nn of 55-85% by weight.

    摘要翻译： 由含有由铝合金制成的第一层和由钼铌合金构成的第二层的多层膜通过仅通过一个同时蚀刻构成多层膜的两层形成精细的布线线廓 同时防止上层形成悬垂。 用于蚀刻含有在基材上形成的铝合金层的多层膜的蚀刻剂和其上形成的铌含量为2〜19重量％的钼 - 铌合金层含有含有磷酸，硝酸的酸混合物的水溶液 ，和有机酸; 并且用该蚀刻剂进行蚀刻的方法。 蚀刻剂的磷酸浓度优选为50〜75重量％，硝酸浓度N 2〜2重量％，酸成分 浓度由55-85％（重量）的N + P +（98/63）N 所定义。

    Etchant and method of etching
    5.
    发明授权
    Etchant and method of etching 有权
    蚀刻剂和蚀刻方法

    公开(公告)号：US06727178B2

    公开(公告)日：2004-04-27

    申请号：US10419179

    申请日：2003-04-21

    申请人： Noriyuki Saitou ,  Takuji Yoshida ,  Kazunori Inoue ,  Makoto Ishikawa ,  Yoshio Kamiharaguchi

    发明人： Noriyuki Saitou ,  Takuji Yoshida ,  Kazunori Inoue ,  Makoto Ishikawa ,  Yoshio Kamiharaguchi

    IPC分类号： H01L2144

    CPC分类号： H01L21/32134 ,  C23F1/20

    摘要： An etchant for patterning thin metal films by wet etching and in particular, an etchant for use in producing semiconductor devices, such as semiconductor elements and liquid-crystal display elements, is for application to a multilayer film having a first layer made of aluminum or an aluminum alloy having formed thereon a second layer made of aluminum or an aluminum alloy each containing at least one element selected from nitrogen, oxygen, silicon, and carbon, and has a phosphoric acid content of from 35 to 65% by weight and a nitric acid content of from 0.5 to 15% by weight; and an etching is performed using the etchant.

    摘要翻译： 用于通过湿蚀刻图案化薄金属膜的蚀刻剂，特别是用于制造半导体器件（诸如半导体元件和液晶显示元件）的蚀刻剂适用于具有由铝制成的第一层或多层膜的多层膜 铝合金，其上形成有由铝或铝合金制成的第二层，每个第二层含有选自氮，氧，硅和碳中的至少一种元素，并且具有35至65重量％的磷酸含量和硝酸 含量为0.5〜15重量％ 并且使用蚀刻剂进行蚀刻。