发明申请
US20070145438A1 PIXEL SENSOR CELL HAVING REDUCED PINNING LAYER BARRIER POTENTIAL AND METHOD THEREOF
有权
具有减少的钉扎层障碍物的像素传感器电池及其方法
- 专利标题: PIXEL SENSOR CELL HAVING REDUCED PINNING LAYER BARRIER POTENTIAL AND METHOD THEREOF
- 专利标题(中): 具有减少的钉扎层障碍物的像素传感器电池及其方法
-
申请号: US11681454申请日: 2007-03-02
-
公开(公告)号: US20070145438A1公开(公告)日: 2007-06-28
- 发明人: James Adkisson , Andres Bryant , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Jerome Lasky , Richard Phelps
- 申请人: James Adkisson , Andres Bryant , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Jerome Lasky , Richard Phelps
- 主分类号: H01L31/113
- IPC分类号: H01L31/113
摘要:
A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer caused by a pinning layer is reduced.