发明申请
US20070145465A1 Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof
有权
具有多晶硅存储点的非易失性浮动栅极存储单元及其制造方法
- 专利标题： Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof
- 专利标题（中）： 具有多晶硅存储点的非易失性浮动栅极存储单元及其制造方法
-
申请号： US11313790申请日： 2005-12-22
-
公开(公告)号： US20070145465A1公开(公告)日： 2007-06-28
- 发明人: Tzyh-Cheang Lee , Fu-Liang Yang , Jiunn-Ren Hwang , Tsung-Lin Lee
- 申请人： Tzyh-Cheang Lee , Fu-Liang Yang , Jiunn-Ren Hwang , Tsung-Lin Lee
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof. The non-volatile floating gate memory cell comprises a semiconductor substrate of a first conductivity type. A first region of a second conductivity type different from the first conductivity type is formed in the semiconductor substrate. A second region of the second conductivity type is formed in the semiconductor substrate spaced apart from the first region. A channel region connects the first and second regions for the conduction of charges. A dielectric layer is disposed on the channel region. A control gate is disposed on the dielectric layer. A tunnel dielectric layer is conformably formed on the semiconductor substrate and the control gate. Two charge storage dots are spaced apart from each other at opposing lateral edges of the sidewalls of the control gate and surface of the semiconductor substrate.
公开/授权文献
信息查询
IPC分类:
