发明申请
- 专利标题: CMOS REFERENCE VOLTAGE SOURCE
- 专利标题(中): CMOS参考电压源
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申请号: US11536809申请日: 2006-09-29
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公开(公告)号: US20070146061A1公开(公告)日: 2007-06-28
- 发明人: Santiago Iriarte
- 申请人: Santiago Iriarte
- 申请人地址: DE Freising
- 专利权人: TEXAS INSTRUMENTS DEUTSCHLAND GMBH
- 当前专利权人: TEXAS INSTRUMENTS DEUTSCHLAND GMBH
- 当前专利权人地址: DE Freising
- 优先权: DE102005047033.5 20050930; DE102006043453.6 20060915
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
A CMOS reference voltage source comprises first and second circuit branches connected in parallel between supply terminals, so that the current in one branch is mirrored in the other, and vice versa. The first circuit branch includes a series connection of a first transistor (MP1) of a first conductivity type, a first transistor (MN1) of a second conductivity type and a second transistor (MN2) of the second conductivity type. The second circuit branch includes a series connection of a second transistor (MP2) of the first conductivity type, a third transistor (MN3) of the second conductivity type and a fourth transistor (MN4) of the second conductivity type. The reference voltage is provided at an interconnection node between the third and fourth transistors (MN3, MN4) of the second conductivity type. No resistors or bipolar devices are needed so that a standard CMOS process can be used.
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