发明申请
- 专利标题： Flash memory device and related erase operation
- 专利标题（中）： 闪存设备和相关擦除操作
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申请号： US11501070申请日： 2006-08-09
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公开(公告)号： US20070147136A1公开(公告)日： 2007-06-28
- 发明人: Chi-Weon Yoon , Heung-Soo Lim
- 申请人： Chi-Weon Yoon , Heung-Soo Lim
- 优先权： KR2005-131876 20051228
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C11/34
摘要：
An erase operation for a flash memory device includes identifying a sector group including a plurality of sectors based on an address, simultaneously pre-programming the sectors in the sector group, simultaneously erasing the sectors the sector group, and simultaneously post-programming the sectors in the sector group.
公开/授权文献
- US07433244B2 Flash memory device and related erase operation 公开/授权日：2008-10-07
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