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发明申请
US20070148789A1 METHODS OF FORMING MAGNETIC RANDOM ACCESS MEMORY DEVICES HAVING TITANIUM-RICH LOWER ELECTRODES WITH OXIDE LAYER AND ORIENTED TUNNELING BARRIER 有权
形成具有氧化物层和面向隧道网的钛电极的磁性随机存取存储器件的方法

METHODS OF FORMING MAGNETIC RANDOM ACCESS MEMORY DEVICES HAVING TITANIUM-RICH LOWER ELECTRODES WITH OXIDE LAYER AND ORIENTED TUNNELING BARRIER
摘要：
Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed plane direction of the seed layer. An oxide layer may be provided between the lower electrode and the magnetic tunnel junction. The lower electrode may be a titanium-rich TiN layer having more than 50 atomic percent titanium content. Analogous fabrication methods are also described.
摘要（中）：

磁性随机存取存储器（MRAM）器件包括下电极和下电极上的磁隧道结。 磁性隧道结包括种子层和隧道势垒，其定向在与种子层的最紧密堆积的平面方向相同的方向上。 可以在下电极和磁隧道结之间提供氧化物层。 下电极可以是具有超过50原子％钛含量的富钛TiN层。 还描述了类似的制造方法。

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