发明申请
- 专利标题： NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 氮化物半导体器件及其制造方法
-
申请号： US11681998申请日： 2007-03-05
-
公开(公告)号： US20070148923A1公开(公告)日： 2007-06-28
- 发明人: Je Won Kim , Sun Woon Kim , Dong Joon Kim
- 申请人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
- 申请人地址： KR KYUNGKI-DO
- 专利权人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址： KR KYUNGKI-DO
- 优先权： KR2004-53392 20040709
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36 ; H01L31/20
摘要：
The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.