Method for fabricating semiconductor device and method for fabricating magnetic head

Invention Application

US20070148953A1 Method for fabricating semiconductor device and method for fabricating magnetic head 审中-公开

Title translation: 制造半导体器件的方法和制造磁头的方法

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Patent Title: Method for fabricating semiconductor device and method for fabricating magnetic head
Patent Title (中): 制造半导体器件的方法和制造磁头的方法
Application No.: US11455920

Application Date: 2006-06-20
Publication No.: US20070148953A1

Publication Date: 2007-06-28
Inventor: Tsukasa Itani , Makoto Sasaki , Yukio Takigawa
Applicant: Tsukasa Itani , Makoto Sasaki , Yukio Takigawa
Applicant Address: JP Kawasaki
Assignee: FUJITSU LIMITED
Current Assignee: FUJITSU LIMITED
Current Assignee Address: JP Kawasaki
Priority: JP2005-379531 20051228
Main IPC: H01L21/4763
IPC: H01L21/4763

Method for fabricating semiconductor device and method for fabricating magnetic head

Abstract:

The method comprises the step of forming an interconnection trench 38 in an inter-layer insulation film 34, the step of forming an interconnection layer 44 of Cu as the main material in the interconnection trench 38, and the step of performing nitrogen-two-fluid processing of concurrently spraying pure water with ammonia and hydrogen solved in and nitrogen gas on the surface of the interconnection layer 44 buried in the interconnection trench 38.

Abstract(Chinese):

该方法包括在层间绝缘膜34中形成互连沟槽38的步骤，在互连沟槽38中形成Cu作为主要材料的互连层44的步骤，以及执行氮二流体处理同时喷洒氨和氢溶解的纯净水和氮气在埋入互连沟槽38中的互连层44的表面上。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）