公开(公告)号：US07811936B2

公开(公告)日：2010-10-12

申请号：US12023404

申请日：2008-01-31

申请人： Yukio Takigawa

发明人： Yukio Takigawa

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76811 ,  H01L21/02063 ,  H01L21/76826 ,  H01L21/76829

摘要： A method produces a semiconductor device having an interconnection structure disposed above a substrate, wherein the interconnection structure has an interconnection and an insulator layer including a low-permittivity layer. The method includes an etching step forming openings in the insulator layer to expose a surface of the interconnection by dry etching, a cleaning step cleaning the surface of the interconnection and the openings in the insulator layer, and a forming step forming another interconnection by filling a conductor material into the openings. The cleaning step includes a first cleaning process using a cleaning liquid, a rinsing process using a rinsing liquid including water and carbonic acid or organic acid, and a second cleaning process using a neutral or alkaline hydrogen aqueous solution that is supplied to the surface of the interconnection and the openings in the insulator layer.

摘要翻译： 一种方法产生具有布置在衬底上方的互连结构的半导体器件，其中互连结构具有互连和包括低介电常数层的绝缘体层。 该方法包括蚀刻步骤，在绝缘体层中形成开口以通过干蚀刻暴露互连表面，清洁互连表面和绝缘体层中的开口的清洁步骤，以及通过填充互连的形成步骤形成另一互连 导体材料进入开口。 清洁步骤包括使用清洁液体的第一清洁处理，使用包括水和碳酸或有机酸的冲洗液体的漂洗处理，以及使用中性或碱性氢水溶液的第二清洗方法，所述中性或碱性氢水溶液被供给到 互连和绝缘体层中的开口。

公开(公告)号：US20080166872A1

公开(公告)日：2008-07-10

申请号：US12023404

申请日：2008-01-31

申请人： Yukio Takigawa

发明人： Yukio Takigawa

IPC分类号： H01L21/4763

CPC分类号： H01L21/76811 ,  H01L21/02063 ,  H01L21/76826 ,  H01L21/76829

摘要： A method produces a semiconductor device having an interconnection structure disposed above a substrate, wherein the interconnection structure has an interconnection and an insulator layer including a low-permittivity layer. The method includes an etching step forming openings in the insulator layer to expose a surface of the interconnection by dry etching, a cleaning step cleaning the surface of the interconnection and the openings in the insulator layer, and a forming step forming another interconnection by filling a conductor material into the openings. The cleaning step includes a first cleaning process using a cleaning liquid, a rinsing process using a rinsing liquid including water and carbonic acid or organic acid, and a second cleaning process using a neutral or alkaline hydrogen aqueous solution that is supplied to the surface of the interconnection and the openings in the insulator layer.

摘要翻译： 一种方法产生具有布置在衬底上方的互连结构的半导体器件，其中互连结构具有互连和包括低介电常数层的绝缘体层。 该方法包括蚀刻步骤，在绝缘体层中形成开口以通过干蚀刻暴露互连表面，清洁互连表面和绝缘体层中的开口的清洁步骤，以及通过填充互连的形成步骤形成另一互连 导体材料进入开口。 清洁步骤包括使用清洁液体的第一清洁处理，使用包括水和碳酸或有机酸的冲洗液体的漂洗处理，以及使用中性或碱性氢水溶液的第二清洗方法，所述中性或碱性氢水溶液被供给到 互连和绝缘体层中的开口。

公开(公告)号：US20070224725A1

公开(公告)日：2007-09-27

申请号：US11687738

申请日：2007-03-19

申请人： Hidenori MIYOSHI ,  Kenji Ishikawa ,  Yukio Takigawa ,  Yoshihiro Nakata ,  Hideki Tateishi

发明人： Hidenori MIYOSHI ,  Kenji Ishikawa ,  Yukio Takigawa ,  Yoshihiro Nakata ,  Hideki Tateishi

IPC分类号： H01L51/40 ,  H01L21/00

CPC分类号： H01L21/02063 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

摘要： A method for processing a substrate having an insulation film and a metal layer thereon comprises the steps of supplying a carboxylic acid anhydride to the substrate, and heating the substrate during the step of supplying the carboxylic acid anhydride to the substrate.

摘要翻译： 一种用于处理具有绝缘膜和金属层的基板的方法，包括以下步骤：向基材供应羧酸酐，并在将羧酸酐供应到基材的步骤期间加热基材。

公开(公告)号：US06565419B1

公开(公告)日：2003-05-20

申请号：US09497819

申请日：2000-02-03

申请人： Naoki Nishio ,  Kazushi Ishida ,  Yukio Takigawa ,  Ei Yano

发明人： Naoki Nishio ,  Kazushi Ishida ,  Yukio Takigawa ,  Ei Yano

IPC分类号： B24B100

CPC分类号： H01L21/6835 ,  B08B7/0028 ,  G03F7/70691 ,  G03F7/70925 ,  H01L21/67028 ,  H01L21/67132 ,  H01L21/6833

摘要： Disclosed is a method of readily removing particles from a stage, that is, a stage particle removing method for removing particles from a stage that holds a planar workpiece. A resin film is placed on the stage, and collected from the stage. The resin film is coated over at least one surface of the planar workpiece such as a semiconductor wafer or glass substrate. The resin film is brought into contact with the stage. The resin film may not be coated over the planar workpiece itself but may be coated over a dedicated planar piece shaped similarly to the planar workpiece, for example, a thin metallic plate that is very smooth. The used resin film is peeled off from the planar workpiece or dedicated planar piece, and the resin film is coated again. Thus, the planar workpiece or dedicated planar piece can be reused.

摘要翻译： 公开了一种容易从载物台去除颗粒的方法，即从保持平面工件的载体中除去颗粒的载片颗粒去除方法。 将树脂膜放置在舞台上，并从舞台收集。 树脂膜涂覆在诸如半导体晶片或玻璃基板的平面工件的至少一个表面上。 树脂膜与载物台接触。 树脂膜可以不涂覆在平面工件本身上，而是可以涂覆在与平面工件类似的专用平面件上，例如非常光滑的薄金属板。 将所使用的树脂膜从平面工件或专用平面片剥离，并且再次涂覆树脂膜。 因此，可以重复使用平面工件或专用平面件。

公开(公告)号：US06338903B1

公开(公告)日：2002-01-15

申请号：US09605545

申请日：2000-06-29

申请人： Yukio Takigawa ,  Ei Yano

发明人： Yukio Takigawa ,  Ei Yano

IPC分类号： B32B2738

CPC分类号： C08J3/00 ,  B03C1/12 ,  C08J2363/00 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/12528 ,  Y10T428/31511 ,  H01L2924/00

摘要： A semiconductor encapsulating resin composition which is powdery particles of a resin composition comprising an epoxy resin, a curing agent and an inorganic filler, and produced through a series of unit operations inclusive of melt-kneading and pulverization of a raw material mixture, wherein foreign metal having magnetic property originating from metal materials constituting production apparatuses used in the unit operations and contained in the powdery particles are selectively recovered and removed by a drum type metal classification-recovering apparatus. This semiconductor encapsulating resin composition provides a high reliability semiconductor device not containing magnetic foreign metal.

摘要翻译： 一种半导体封装树脂组合物，其是包含环氧树脂，固化剂和无机填料的树脂组合物的粉末颗粒，并且通过包括原料混合物的熔融捏合和粉碎的一系列单元操作制备，其中外来金属 通过鼓式金属分级回收装置选择性地回收和除去由构成单元操作中使用并包含在粉末颗粒中的生产装置的金属材料的磁性。 该半导体封装树脂组合物提供不含磁性外来金属的高可靠性半导体器件。

公开(公告)号：US5659004A

公开(公告)日：1997-08-19

申请号：US389784

申请日：1995-02-16

申请人： Yukio Takigawa ,  Yoshihiro Nakata ,  Shigeaki Yagi ,  Norio Sawatari ,  Nobuo Kamehara

发明人： Yukio Takigawa ,  Yoshihiro Nakata ,  Shigeaki Yagi ,  Norio Sawatari ,  Nobuo Kamehara

IPC分类号： C08G59/24 ,  C08G59/62 ,  C08L63/00 ,  C08G8/28

CPC分类号： C08G59/621 ,  C08G59/245 ,  C08L63/00 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/10253

摘要： An epoxy resin composition contains an epoxy resin as a substratal resin and incorporates therein a polyallylphenol curing agent. The composition may also contain a polyphenol compound. The epoxy resin may have a naphthalene skeleton. The epoxy resin composition may also include a blend of two or more epoxy resins.

摘要翻译： 环氧树脂组合物含有作为底物树脂的环氧树脂，并在其中掺入聚烯丙基酚固化剂。 组合物还可以含有多酚化合物。 环氧树脂可以具有萘骨架。 环氧树脂组合物还可以包括两种或多种环氧树脂的共混物。

公开(公告)号：US4319959A

公开(公告)日：1982-03-16

申请号：US142688

申请日：1980-04-22

申请人： Kazuo Monta ,  Yukio Takigawa

发明人： Kazuo Monta ,  Yukio Takigawa

IPC分类号： G21C17/10 ,  G21C7/00

CPC分类号： G21C17/10

摘要： In supervising the channel stability of a nuclear reactor, the thermal power and the coolant flow quantity in each fuel assembly are determined by signals produced by a plurality of neutron flux detectors installed in the nuclear reactor, and signals regarding other operating conditions of the reactor, and the thermo-hydrodynamic stability of each fuel assembly is judged by the above-mentioned thermal power and coolant flow quantity as well as the measured values of such parameters as inlet subcooling of the core and of the pressure in the reactor vessel. Or the stability limit of a selected one of the parameters is determined. Then, the threshold of the thermo-hydrodynamic stability or the stability limit is compared with the actually measured value thereof so as to determine a stability margin.

摘要翻译： 在监督核反应堆的通道稳定性时，每个燃料组件中的热功率和冷却​​剂流量由安装在核反应堆中的多个中子通量检测器产生的信号确定，并且关于反应堆的其它操作条件的信号， 并且通过上述热功率和冷却​​剂流量以及诸如芯的入口过冷度和反应器容器中的压力等参数的测量值来判断每个燃料组件的热流体动力学稳定性。 或者确定所选择的一个参数的稳定性极限。 然后，将热流体动力学稳定性或稳定极限的阈值与其实际测量值进行比较，以确定稳定裕度。

公开(公告)号：US4115516A

公开(公告)日：1978-09-19

申请号：US805354

申请日：1977-06-10

申请人： Koichi Takami ,  Shingo Abe ,  Yukio Takigawa ,  Toshinori Tsutsumi ,  Yoshio Kinsho

发明人： Koichi Takami ,  Shingo Abe ,  Yukio Takigawa ,  Toshinori Tsutsumi ,  Yoshio Kinsho

IPC分类号： B01D53/94 ,  B01D53/56 ,  C01B21/40 ,  B01D53/00

CPC分类号： B01D53/56

摘要： A compressed exhaust gas containing nitrogen oxides discharged from a compressed absorption type nitric acid plant is treated by adding ammonia or an ammonia precursor to the gas and passing the gas through a NO.sub.x removing catalytic layer to an exhaust gas turbine wherein the temperature of the main flow of the exhaust gas in the zone from the point of which ammonia or an ammonia precursor is added to the outlet of the exhaust gas turbine is maintained at a temperature higher than T.degree. K = 10.sup.3 / (1.91 - 0.228 log P) [P : a sum of partial pressures of ammonia and nitrogen oxides (atm.)] and feeding an inert gas into the place of the zone in which the exhaust gas stagnates.

摘要翻译： 从压缩吸收型硝酸设备排出的含有氮氧化物的压缩废气通过向气体中加入氨或氨前体并将气体通过NOx去除催化剂层来处理到排气涡轮机，其中主流的温度 从氨水或氨前体加入到废气涡轮机出口处的废气中的废气保持在高于T°K = 103 /（1.91-0.228logP）的温度[P： 氨和氮氧化物的分压的总和（atm。）]，并将惰性气体输送到废气停滞的区域的位置。

公开(公告)号：US20100007020A1

公开(公告)日：2010-01-14

申请号：US12495201

申请日：2009-06-30

申请人： Yukio Takigawa

发明人： Yukio Takigawa

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/14 ,  H01L2924/00

摘要： A semiconductor device includes: an insulating film including a porous insulating material and formed above a substrate; an interconnection wire including copper and buried in a groove formed at least in an obverse surface of the insulating film; and a barrier insulating film including an insulating material containing a nitrogen heterocyclic compound and formed over the insulating film and the interconnection wire.

摘要翻译： 半导体器件包括：绝缘膜，其包括多孔绝缘材料并形成在基板上; 包括铜的互连线，并埋设在至少在绝缘膜的正面上形成的沟槽中; 以及包含含有氮杂环化合物的绝缘材料并形成在绝缘膜和互连线上的阻挡绝缘膜。

公开(公告)号：US07211519B2

公开(公告)日：2007-05-01

申请号：US11094578

申请日：2005-03-31

申请人： Yukio Takigawa ,  Noriyoshi Shimizu ,  Toshiya Suzuki ,  Hajime Kawabe

发明人： Yukio Takigawa ,  Noriyoshi Shimizu ,  Toshiya Suzuki ,  Hajime Kawabe

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/4763

CPC分类号： H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3143 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829

摘要： After an SiC film (4), an SiO2 film (5) and a silicon nitride film (6) are formed sequentially on an organic low dielectric constant film (3), by performing O2 plasma processing to a surface of the silicon nitride film (6), an oxide layer (7) is formed on the surface of the silicon nitride film (6). Then, a wiring trench pattern is formed on the silicon nitride film (6) and the oxide layer (7), and a resin layer (10) on which a via hole pattern is formed is formed. Subsequently, a portion of the oxide layer (7) exposed from the resin layer (10) is removed along with unnecessary particles.

摘要翻译： 在SiC膜（4）之后，依次在有机低介电常数膜（3）上形成SiO 2膜（5）和氮化硅膜（6），通过执​​行O < 对氮化硅膜（6）的表面进行等离子体处理，在氮化硅膜（6）的表面上形成氧化物层（7）。 然后，在氮化硅膜（6）和氧化物层（7）上形成布线沟槽图案，形成通孔图案的树脂层（10）。 随后，从树脂层（10）露出的氧化物层（7）的一部分与不需要的颗粒一起除去。