Invention Application
- Patent Title: MULTI-PATH ACCESSIBLE SEMICONDUCTOR MEMORY DEVICE
- Patent Title (中): 多通道可访问的半导体存储器件
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Application No.: US11548603Application Date: 2006-10-11
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Publication No.: US20070150668A1Publication Date: 2007-06-28
- Inventor: Kyoung-Hwan KWON , Dong-Il SEO , Ho-Cheol LEE , Han-Gu SOHN , Yun-Hee SHIN
- Applicant: Kyoung-Hwan KWON , Dong-Il SEO , Ho-Cheol LEE , Han-Gu SOHN , Yun-Hee SHIN
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Priority: KR2005-127532 20051222
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A semiconductor memory device includes ports, data line pairs, where each port associated with one of the data line pairs, sets of address lines, where each port associated with one of the sets of address lines, a shared memory region of a memory cell array, where the shared memory region accessible through the ports, an access controller coupled to the ports and configured to generate an access selection signal in response to a plurality of control signals received through the ports, and an access router coupled to the shared memory region, the data line pairs, and the sets of address lines, the access router configured to selectively couple one of the sets of address lines and one of the data line pairs to the shared memory region in response to the access selection signal.
Information query