发明申请
US20070150777A1 Memory test circuit and method 有权
内存测试电路和方法

Memory test circuit and method
摘要:
A memory test circuit according to an embodiment of the invention executes a test on a memory in accordance with a pattern mode signal designating a sub-test pattern included in a test pattern and including a plurality of test actions for the memory, and stores the pattern mode signal as failure information in a failure information storage register. The circuit includes a storage determining circuit determining whether or not to store the failure information in a failure information storage register based on preset failure information storage method information.
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