发明申请
- 专利标题: Memory test circuit and method
- 专利标题(中): 内存测试电路和方法
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申请号: US11642898申请日: 2006-12-21
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公开(公告)号: US20070150777A1公开(公告)日: 2007-06-28
- 发明人: Tomonori Sasaki
- 申请人: Tomonori Sasaki
- 专利权人: NEC Electronics Corporation
- 当前专利权人: NEC Electronics Corporation
- 优先权: JP2005-371683 20051226
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
A memory test circuit according to an embodiment of the invention executes a test on a memory in accordance with a pattern mode signal designating a sub-test pattern included in a test pattern and including a plurality of test actions for the memory, and stores the pattern mode signal as failure information in a failure information storage register. The circuit includes a storage determining circuit determining whether or not to store the failure information in a failure information storage register based on preset failure information storage method information.
公开/授权文献
- US07603595B2 Memory test circuit and method 公开/授权日:2009-10-13
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