A light sensing circuit (400) and image sensor array includes at least one light sensing element (402), such as a photodiode, and at least one ferroelectric element (404), such as a CMOS ferroelectric gate field effect transistor (FET), that is operatively coupled to the light sensing element to form a photo cell. The ferroelectric element provides charge storage as a non-volatile analog memory element. As such, a type of photo cell serves as a ferroelectric memory that can store the charge from the light sensing element and be programmed to provide electronic shutter operation.