发明申请
US20070158686A1 Igbt cathode design with improved safe operating area capability
有权
Igbt阴极设计，具有改进的安全操作区域能力
- 专利标题： Igbt cathode design with improved safe operating area capability
- 专利标题（中）： Igbt阴极设计，具有改进的安全操作区域能力
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申请号： US10579837申请日： 2004-11-16
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公开(公告)号： US20070158686A1公开(公告)日： 2007-07-12
- 发明人: Munaf Rahimo , Stefan Linder
- 申请人： Munaf Rahimo , Stefan Linder
- 申请人地址： CH Zurich CH-8050
- 专利权人： ABB Technology AG
- 当前专利权人： ABB Technology AG
- 当前专利权人地址： CH Zurich CH-8050
- 优先权： EP03405816.4 20031117
- 国际申请： PCT/CH04/00691 WO 20041116
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L29/739
摘要：
In an insulated gate bipolar transistor, an improved safe operating area capability is achieved according to the invention by a two-fold base region comprising a first base region (81), which is disposed in the channel region (7) so that it encompasses the one or more source regions (6), but does not adjoin the second main surface underneath the gate oxide layer (41), and a second base region (82) is disposed in the semiconductor substrate (2) underneath the base contact area (821) so that it partially overlaps with the channel region (7) and with the first base region (81).
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