- 专利标题: D/A conversion circuit and semiconductor device
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申请号: US11709072申请日: 2007-02-22
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公开(公告)号: US20070158689A1公开(公告)日: 2007-07-12
- 发明人: Jun Koyama , Mitsuaki Osame , Yukio Tanaka , Munehiro Azami , Naoko Yano , Shou Nagao
- 申请人: Jun Koyama , Mitsuaki Osame , Yukio Tanaka , Munehiro Azami , Naoko Yano , Shou Nagao
- 申请人地址: JP Atsugi-shi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP09-344351 19971127; JP09-365054 19971219; JP10-146592 19980512
- 主分类号: H01L27/10
- IPC分类号: H01L27/10
摘要:
A D/A conversion circuit with a small area is provided. In the D/A conversion circuit, according to a digital signal transmitted from address lines of an address decoder, one of four gradation voltage lines is selected. A circuit including two N-channel TFTs is connected in series to a circuit including two P-channel TFT, and a circuit including the circuits connected in series to each other is connected in parallel to each of the gradation voltage lines. Further, an arrangement of the circuit including the two N-channel TFTs and the circuit including the two P-channel TFTs is reversed for every gradation voltage line. By this, the crossings of wiring lines in the D/A conversion circuit becomes small and the area can be made small.
公开/授权文献
- US07550790B2 D/A conversion circuit and semiconductor device 公开/授权日:2009-06-23