发明申请
- 专利标题： METHOD OF PROGRAMMING AND ERASING MULTI-LEVEL FLASH MEMORY
- 专利标题（中）： 编程和擦除多级闪存的方法
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申请号： US11616770申请日： 2006-12-27
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公开(公告)号： US20070159893A1公开(公告)日： 2007-07-12
- 发明人: TSO-HUNG FAN , Chih-Chieh Yeh , Tao-Cheng Lu
- 申请人： TSO-HUNG FAN , Chih-Chieh Yeh , Tao-Cheng Lu
- 优先权： TW91100639 20020117
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C11/34
摘要：
A programming method of the multi-level flash memory comprises shooting a programming voltage that is increasing upwards stepwise each time into the gate of the multi-level flash memory, and following, shooting a program verify voltage that is decreasing downwards to program a multi-level in the multi-level flash memory and shooting an additional programming voltage into the multi-level flash memory after the last program verify voltage is shot. An erasing method of the multi-level flash memory comprises shooting an erasing voltage that is decreasing downwards stepwise each time into a gate of the multi-level flash memory, and following, shooting a erase verify voltage that is increasing upwards to erase a multi-level in the multi-level flash memory and shooting an additional voltage into the multi-level flash memory after the last erase verify voltage is shot.
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