发明申请
- 专利标题： REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND SUBSTRATE WITH A CONDUCTIVE FILM FOR THE MASK BLANK
- 专利标题（中）： 用于EUV光刻的反射掩模层和带有导电膜的掩模
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申请号： US11566883申请日： 2006-12-05
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公开(公告)号： US20070160874A1公开(公告)日： 2007-07-12
- 发明人: Kazuyuki Hayashi , Takashi Sugiyama , Masaki Mikami
- 申请人： Kazuyuki Hayashi , Takashi Sugiyama , Masaki Mikami
- 申请人地址： JP Chiyoda-ku
- 专利权人： ASAHI GLASS COMPANY, LIMITED
- 当前专利权人： ASAHI GLASS COMPANY, LIMITED
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2005-357858 20051212
- 主分类号： B32B9/04
- IPC分类号： B32B9/04
摘要：
To provide a substrate with a conductive film for an EUV mask blank having an increased surface hardness, and a substrate with a reflective multilayer film and an EUV mask blank using such a substrate with a conductive film. A substrate with a conductive film to be used for production of a reflective mask blank for EUV lithography, characterized in that the chief material of the conductive film is at least one member selected from the group consisting of Cr, Ti, Zr, Nb, Ni and V, and the conductive film contains B (boron) at an average concentration of from 1 to 70 at %.
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