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    Soft magnetic material, powder magnetic core and method of manufacturing soft magnetic material
    1.
    发明授权
    Soft magnetic material, powder magnetic core and method of manufacturing soft magnetic material 有权
    软磁材料，粉末磁芯和软磁材料的制造方法

    公开(公告)号：US08323725B2

    公开(公告)日：2012-12-04

    申请号：US12816833

    申请日：2010-06-16

    申请人： Toru Maeda ,  Naoto Igarashi ,  Haruhisa Toyoda ,  Hirokazu Kugai ,  Kazuyuki Hayashi ,  Hiroko Morii ,  Seiji Ishitani

    发明人： Toru Maeda ,  Naoto Igarashi ,  Haruhisa Toyoda ,  Hirokazu Kugai ,  Kazuyuki Hayashi ,  Hiroko Morii ,  Seiji Ishitani

    IPC分类号： H01F1/20

    CPC分类号： B22F1/02 ,  B22F2998/10 ,  H01F1/24 ,  H01F1/26 ,  H01F41/0246 ,  Y10T428/2991 ,  B22F3/02 ,  B22F3/24

    摘要： A soft magnetic material is a soft magnetic material including a composite magnetic particle (30) having a metal magnetic particle (10) mainly composed of Fe and an insulating coating (20) covering metal magnetic particle (10), and insulating coating (20) contains an iron phosphate compound and an aluminum phosphate compound. The atomic ratio of Fe contained in a contact surface of insulating coating (20) in contact with metal magnetic particle (10) is larger than the atomic ratio of Fe contained in the surface of insulating coating (20). The atomic ratio of Al contained in the contact surface of insulating coating (20) in contact with metal magnetic particle (10) is smaller than the atomic ratio of Al contained in the surface of insulating coating (20). Thus, iron loss can be reduced.

    摘要翻译： 软磁性材料是包括具有主要由Fe构成的金属磁性粒子（10）和覆盖金属磁性粒子（10）的绝缘涂层（20）的复合磁性体（30）和绝缘涂层（20）的软磁性材料， 含有磷酸铁化合物和磷酸铝化合物。 包含在与金属磁性颗粒（10）接触的绝缘涂层（20）的接触表面中的Fe的原子比大于绝缘涂层（20）表面中所含的Fe的原子比。 绝缘涂层（20）与金属磁性颗粒（10）接触的接触表面中所含的Al的原子比小于绝缘涂层（20）表面中的Al的原子比。 因此，可以减少铁损。

    Reflective mask blank for EUV lithography
    5.
    发明授权
    Reflective mask blank for EUV lithography 失效
    EUV光刻用反光罩

    公开(公告)号：US08137872B2

    公开(公告)日：2012-03-20

    申请号：US12952254

    申请日：2010-11-23

    申请人： Kazuyuki Hayashi

    发明人： Kazuyuki Hayashi

    IPC分类号： G03F1/00 ,  B32B9/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/84 ,  Y10T428/31616

    摘要： To provide a reflective mask blank for EUV lithography having a low reflective layer having a low reflectance in the wavelength region of EUV light and an inspection light for a mask pattern, particularly having low reflection properties in the entire wavelength region (190 to 260 nm) of an inspection light for a mask pattern, and having a high etching rate in chlorine type gas etching. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer to reflect EUV light, an absorber layer to absorb EUV light and a low reflective layer to an inspection light (wavelength:190 nm to 260 nm) for a mask pattern, formed in this order over the substrate, wherein the low reflective layer contains silicon (Si) and nitrogen (N) in a total content of at least 95 at %, has a Si content of from 5 to 80 at %, and a N content of from 15 to 90 at %.

    摘要翻译： 为了提供一种用于EUV光刻的反射掩模板，其具有在EUV光的波长区域中具有低反射率的低反射层和用于掩模图案的检查光，特别是在整个波长区域（190-260nm）具有低反射特性， 的掩模图案的检查光，并且在氯气蚀刻中具有高蚀刻速率。 用于EUV光刻的反射掩模板，包括基板和反射EUV光的反射层，用于将掩模图案的EUV光和低反射层吸收到检查光（波长：190nm至260nm）的吸收层 ，其中低反射层含有至少95原子％的总含量的硅（Si）和氮（N），Si含量为5-80原子％，N 含量从15％到90％。

    Reflective mask blank for EUV lithography, and substrate with functional film for the mask blank
    6.
    发明授权
    Reflective mask blank for EUV lithography, and substrate with functional film for the mask blank 有权
    用于EUV光刻的反光掩模板，以及具有掩模板功能膜的基板

    公开(公告)号：US08003282B2

    公开(公告)日：2011-08-23

    申请号：US12483785

    申请日：2009-06-12

    申请人： Kazuyuki Hayashi ,  Kazuo Kadowaki ,  Takashi Sugiyama

    发明人： Kazuyuki Hayashi ,  Kazuo Kadowaki ,  Takashi Sugiyama

    IPC分类号： G03F1/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/38 ,  G21K1/062 ,  Y10T428/24355

    摘要： Provided are a substrate with a conductive film for an EUV mask blank in which the generation of particles due to abrasion between an electrostatic chuck and the substrate is prevented; and a substrate with a multilayer reflective film and an EUV mask blank each employing such a substrate with a conductive film.A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, the conductive film containing chromium (Cr) and nitrogen (N), the average concentration of N in the conductive film being at least 0.1 atomic % and less than 40 atomic %, the crystal state of at least a surface of the conductive film being amorphous, the sheet resistance of the conductive film being at most 27 Ω/□, and the surface roughness (rms) of the conductive film being at most 0.5 nm.

    摘要翻译： 提供一种具有用于EUV掩模坯料的导电膜的基板，其中防止了由于静电卡盘和基板之间的磨损而产生的颗粒; 以及具有多层反射膜的基板和使用这种具有导电膜的基板的EUV掩模板。 具有用于制造用于EUV光刻的反射掩模板的导电膜的基板，含有铬（Cr）和氮（N）的导电膜，导电膜中的N的平均浓度为至少0.1原子％以下 40原子％以上，导电膜的至少表面的晶体状态为无定形，导电膜的薄层电阻为27〜OHgr /□以下，导电膜的表面粗糙度（rms）为最多 0.5nm。

    Reflective mask blank for EUV lithography
    7.
    发明授权
    Reflective mask blank for EUV lithography 有权
    EUV光刻用反光罩

    公开(公告)号：US07906259B2

    公开(公告)日：2011-03-15

    申请号：US12205967

    申请日：2008-09-08

    申请人： Kazuyuki Hayashi ,  Kazuo Kadowaki ,  Takashi Sugiyama ,  Masaki Mikami

    发明人： Kazuyuki Hayashi ,  Kazuo Kadowaki ,  Takashi Sugiyama ,  Masaki Mikami

    IPC分类号： G03F1/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/22

    摘要： To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at % and less than 5 at %, the Si content is from 1 to 25 at %, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.

    摘要翻译： 为了提供具有吸收层的EUV光刻用的反射掩模板，其对EUV光和图案检查光的波长范围内的光呈现低反射率，并且易于控制以具有所需的膜组成和膜厚度。 一种用于EUV光刻的反射掩模板，包括基板和用于反射EUV光的反射层和用于吸收在基板上依次形成的EUV光的吸收层，其中吸收层包含钽（Ta），硼（B） ，硅（Si）和氮（N），并且在吸收层中，B含量为至少1原子％且小于5原子％，Si含量为1至25原子％，Ta的组成比 至N（Ta：N）为8:1至1:1。

    SILICA-BASED SINGLE CORE OPTICAL FIBER, SILICA-BASED MULTI CORE OPTICAL FIBER, AND FABRICATION METHOD FOR THE SAME
    8.
    发明申请
    SILICA-BASED SINGLE CORE OPTICAL FIBER, SILICA-BASED MULTI CORE OPTICAL FIBER, AND FABRICATION METHOD FOR THE SAME 有权
    基于二氧化硅的单芯光纤，基于硅的多芯光纤及其制造方法

    公开(公告)号：US20090245742A1

    公开(公告)日：2009-10-01

    申请号：US12333970

    申请日：2008-12-12

    申请人： Manabu Kudou ,  Kazuyuki Hayashi ,  Takashi Tsumanuma

    发明人： Manabu Kudou ,  Kazuyuki Hayashi ,  Takashi Tsumanuma

    IPC分类号： G02B6/036 ,  G02B6/00 ,  C03C25/10

    CPC分类号： G02B6/02 ,  C03B19/1461 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/31 ,  C03B2203/26 ,  G02B6/02042

    摘要： A silica-based multi core optical fiber and a fabrication method for the same are provided, and include two or more cores of GeO2—SiO2 glass including an fluorine concentration not less than about 15 w % and a germanium concentration about 0.05 wt % to 2 wt %, in a core. A relative refractive index difference of a cladding and a core is not less than about 3%; and a ratio of a cladding diameter to a core diameter is about 1.02 to 3.0. A silica-based single core optical fiber is also provided, and includes a core having a germanium concentration not less than about 15 wt % and an fluorine concentration about 0.05 wt % to 2 wt %.

    摘要翻译： 提供了一种二氧化硅基多芯光纤及其制造方法，并且包括两个或更多个GeO 2 -SiO 2玻璃芯，其包含氟浓度不小于约15w％，锗浓度为约0.05wt％至2 重量％。 包层和芯的相对折射率差不小于约3％; 并且包层直径与芯直径的比率为约1.02〜3.0。 还提供了二氧化硅基单芯光纤，并且包括锗浓度不小于约15重量％，氟浓度为约0.05重量％至2重量％的芯。