Local shape collapse of a wafer end portion is suppressed to the minimum level, and a wafer front surface as well as a wafer end portion is uniformly etched while preventing an etchant from flowing to a wafer rear surface. There is provided an etching method of a single wafer which supplies an etchant onto a wafer front surface in a state where a single wafer having flattened front and rear surfaces is held, and etches the wafer front surface and a front surface side end portion by using a centrifugal force generated by horizontally rotating the wafer. According to this method, the etchant is intermittently supplied onto the front surface of the wafer in twice or more, supply of the etchant is stopped after the etchant for one process is supplied, and the etchant for the next process is supplied after the supplied etchant flows off from the end portion of the wafer.