公开(公告)号：US20090289378A1

公开(公告)日：2009-11-26

申请号：US12467438

申请日：2009-05-18

申请人： Tomohiro HASHII

发明人： Tomohiro HASHII

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is a semiconductor wafer including an orientation identification mark, which is used for identifying crystal orientation, on a peripheral surface thereof, in which the orientation identification mark is smoothly joined with a portion outside of the orientation identification mark on the peripheral surface, has a planar surface that is orthogonal to an inner diameter direction of the semiconductor wafer, and has a gloss different from that in the portion outside of the orientation identification mark on the peripheral surface.

摘要翻译： 本发明是一种半导体晶片，其包括用于识别晶体取向的取向识别标记，其周向表面上的方向识别标记与外周表面上的取向识别标记之外的部分平滑地接合， 具有与半导体晶片的内径方向正交的平坦表面，并且具有与外周面上的取向识别标记外侧的部分不同的光泽。

公开(公告)号：US20090289377A1

公开(公告)日：2009-11-26

申请号：US12466519

申请日：2009-05-15

申请人： Tomohiro HASHII

发明人： Tomohiro HASHII

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is a semiconductor wafer including an orientation identification mark, which is used for identifying crystal orientation, on a peripheral surface thereof, in which the orientation identification mark has a terraced structure that is concave toward an inner diameter direction of the semiconductor wafer with respect to a portion outside of the orientation identification mark on the peripheral surface, and has a planar surface that is orthogonal to a diameter direction of the semiconductor wafer; and has a gloss different from that of the portion outside of the orientation identification mark on the peripheral surface.

摘要翻译： 本发明是一种半导体晶片，其包括用于识别晶体取向的取向识别标记，其周向表面上具有朝向半导体晶片的内径方向凹入的梯形结构， 相对于外周面上的取向识别标记之外的部分，并且具有与半导体晶片的直径方向正交的平面; 并且具有与周边表面上的取向识别标记之外的部分的光泽度不同的光泽。

公开(公告)号：US20090042390A1

公开(公告)日：2009-02-12

申请号：US11836493

申请日：2007-08-09

申请人： Sakae Koyata ,  Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi

发明人： Sakae Koyata ,  Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi

IPC分类号： H01L21/302 ,  C09K13/08

CPC分类号： H01L21/30608 ,  C09K13/02 ,  C09K13/08 ,  H01L21/02019

摘要： It is possible to reduce workloads of a both-side simultaneous polishing process or a single-side polishing process, and to achieve both of the maintenance of the wafer flatness and the reduction in wafer front side roughness upon completing a flattening process. A method for manufacturing silicon wafers according to the present invention includes a flattening process 13 of grinding or lapping front and back sides of a thin disc-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process of immersing the silicon wafer in an etchant for controlling a silicon wafer surface shape in which a fluorochemical surfactant is uniformly mixed in an alkaline aqueous solution to etch the front and back sides of the silicon wafer, and a both-side simultaneous polishing process 16 of simultaneously polishing the front and back sides of the etched silicon wafer or a single-side polishing process of polishing the front and back sides of the etched wafer for every side, in this order.

摘要翻译： 可以减少双面同时抛光工艺或单面抛光工艺的工作量，并且在完成平坦化处理时实现晶片平整度的维持和晶片正面粗糙度的降低。 根据本发明的硅晶片的制造方法包括：通过对硅单晶锭进行切片而得到的薄片状硅晶片的正面和背面进行研磨或研磨的平坦化工艺13，将硅晶片浸入的蚀刻工艺 用于控制硅晶片表面形状的蚀刻剂，其中含氟表面活性剂在碱性水溶液中均匀混合以蚀刻硅晶片的正面和背面;以及双面同时抛光工艺16，同时抛光前后 蚀刻的硅晶片的侧面或者对于每一侧抛光蚀刻后的晶片的正面和背面的单面抛光工艺。

公开(公告)号：US20070298614A1

公开(公告)日：2007-12-27

申请号：US11893538

申请日：2007-08-15

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/306

CPC分类号： H01L21/6708 ,  H01L21/67075 ,  Y10S134/902

摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

摘要翻译： 用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。 晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。 提供在晶片上的蚀刻流体通过晶片的旋转而扩展。 蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸， 吸气装置

公开(公告)号：US20060169667A1

公开(公告)日：2006-08-03

申请号：US11345009

申请日：2006-01-31

申请人： Sakae Koyata ,  Yuichi Kakizono ,  Tomohiro Hashii ,  Katsuhiko Murayama

发明人： Sakae Koyata ,  Yuichi Kakizono ,  Tomohiro Hashii ,  Katsuhiko Murayama

IPC分类号： B44C1/22 ,  H01L21/461 ,  C09K13/00 ,  C23F1/00

CPC分类号： H01L21/02008 ,  C30B33/10

摘要： A method for manufacturing a silicon wafer includes a planarizing process 13 for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process for dipping the silicon wafer into the etching liquid wherein silica powder is dispersed uniformly in an alkali aqueous solution, thereby etching the upperside and lowerside surfaces of the silicon wafer, and a both-side simultaneous polishing process 16 for polishing the upperside and lowerside surfaces of the etched silicon wafer simultaneously or a one-side polishing process for polishing the upperside and lowerside surfaces of the etched silicon wafer one after another, in this order.

摘要翻译： 一种硅晶片的制造方法，其特征在于，包括：通过对硅单晶锭进行切片而得到的薄盘状硅晶片的上下表面进行抛光或研磨的平坦化工序13，将硅晶片浸入蚀刻液中的蚀刻工序 其中二氧化硅粉末均匀地分散在碱性水溶液中，从而蚀刻硅晶片的上侧和下侧表面，以及用于同时抛光被蚀刻的硅晶片的上侧和下侧表面的双面同时抛光工艺16， 按照此顺序一次一个地抛光蚀刻的硅晶片的上侧和下侧表面的侧面抛光工艺。

公开(公告)号：US09550264B2

公开(公告)日：2017-01-24

申请号：US13322955

申请日：2010-06-04

申请人： Tomohiro Hashii ,  Yuichi Kakizono ,  Yoshiaki Kurosawa

发明人： Tomohiro Hashii ,  Yuichi Kakizono ,  Yoshiaki Kurosawa

IPC分类号： B24B1/00 ,  B24B7/22 ,  B24D7/06 ,  H01L21/02

CPC分类号： B24B7/228 ,  B24B7/17 ,  B24B37/08 ,  B24B37/22 ,  B24B37/245 ,  B24D7/06 ,  H01L21/02013

摘要： Disclosure relates to a fixed abrasive-grain processing device and a method of fixed abrasive-grain processing used for producing a semiconductor wafer, and a method for producing a semiconductor wafer which make the surface of the semiconductor wafer possible to have preferable flatness and which can prevent the number of steps and the installation area of facilities from increasing. The producing of semiconductor wafers uses a fixed abrasive-grain processing device including a lower fixed abrasive-grain layer that is adjacent to the top surface of the lower surface-plate and that grinds the top surfaces of the plurality of semiconductor wafers; an upper fixed abrasive-grain layer that is adjacent to the bottom surface of the upper surface-plate and that grinds the bottom surfaces of the plurality of semiconductor wafers; a carrier plate that is horizontally interposed between the lower surface-plate and the upper surface-plate and that includes a plurality of holes each accommodating one of the plurality of semiconductor wafers; and a carrier rotating device that circularly moves the carrier plate, wherein the lower fixed abrasive-grain layer and the upper fixed abrasive-grain layer include fixed abrasive grain having a diameter of 4 μm or less and being dispersed and fixed in elastic members.

摘要翻译： 公开涉及固定磨粒加工装置和用于制造半导体晶片的固定磨粒加工方法，以及制造半导体晶片的方法，其使得半导体晶片的表面可以具有优选的平坦度，并且可以 防止设施的数量和安装面积的增加。 半导体晶片的制造使用固定的磨粒处理装置，其包括与下表面板的顶表面相邻的下固定磨粒层，并且研磨多个半导体晶片的顶表面; 上固定磨粒层，其与所述上表面板的底表面相邻并且研磨所述多个半导体晶片的底表面; 水平插入在所述下表面板和所述上表面板之间并且包括多个孔的承载板，每个孔容纳所述多个半导体晶片中的一个; 以及使所述载板圆周地移动的载体旋转装置，其中，所述下固定磨粒层和所述上固定磨粒层包括直径为4μm以下的固定磨粒，并分散固定在弹性部件中。

公开(公告)号：US20120315739A1

公开(公告)日：2012-12-13

申请号：US13581011

申请日：2011-02-16

申请人： Tomohiro Hashii ,  Yuichi Kakizono ,  Yoshiaki Kurosawa

发明人： Tomohiro Hashii ,  Yuichi Kakizono ,  Yoshiaki Kurosawa

IPC分类号： H01L21/78

CPC分类号： B24B37/042 ,  B24B9/065 ,  B24B27/0633 ,  B24B37/08 ,  B24B37/245 ,  B28D5/0076 ,  H01L21/02008 ,  H01L21/02013 ,  H01L21/02021 ,  H01L21/02024

摘要： All treatments performed in machining processes other than a polishing process are performed while pure water free from free abrasive grains is supplied. Thus, an amount of abrasive grains included in a used processing liquid discharged in each process is reduced and semiconductor scraps are collected from the used slurry for recycling.

摘要翻译： 在进行抛光处理以外的加工工序中进行的所有处理都是在不含有游离磨粒的纯水的情况下进行的。 因此，减少了在各工序中排出的使用过的处理液中所含的磨粒的量，并将二氧化硅废料从废浆中回收再循环。

公开(公告)号：US08066896B2

公开(公告)日：2011-11-29

申请号：US11893538

申请日：2007-08-15

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： B44C1/22

CPC分类号： H01L21/6708 ,  H01L21/67075 ,  Y10S134/902

摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

摘要翻译： 用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。 晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。 提供在晶片上的蚀刻流体通过晶片的旋转而扩展。 蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸， 吸气装置

公开(公告)号：US20110263183A1

公开(公告)日：2011-10-27

申请号：US13083833

申请日：2011-04-11

申请人： Yoshiaki KUROSAWA ,  Tomohiro HASHII ,  Yuichi KAKIZONO

发明人： Yoshiaki KUROSAWA ,  Tomohiro HASHII ,  Yuichi KAKIZONO

IPC分类号： B24B57/00 ,  B24B29/02

CPC分类号： B24B37/08 ,  B24B57/02

摘要： The present invention provides a polishing solution distribution apparatus capable of reducing distribution deviation of polishing solution even when leveling for installation is insufficient or inclination of an installation location varies and a polishing apparatus having the same. The polishing solution distribution apparatus includes a cone-shaped branch body in which a solution pan to store supplied polishing solution is formed and in which plural flow passages radially connected to a side face of the solution pan respectively and having a delivery port to supply polishing solution to a position lower than the connected position are formed, a support portion to support the branch body, and a universal joint mechanism to support the branch body via the support portion at a position being higher than the gravity center of the branch body.

摘要翻译： 本发明提供一种能够减少抛光液的分布偏差的抛光液分配装置，即使在安装调平不足或安装位置的倾斜变化的情况下，也能够减少研磨液的分布偏差。 抛光液分配装置包括锥形分支体，其中形成有用于存储供应的抛光溶液的溶液盘，并且其中分别径向地连接到溶液盘的侧面并具有输送口以提供抛光溶液的多个流动通道 形成到比连接位置低的位置，支撑分支体的支撑部和万向接头机构，用于在比分支体的重心高的位置经由支撑部支撑分支体。

公开(公告)号：US20100151597A1

公开(公告)日：2010-06-17

申请号：US12161070

申请日：2007-01-17

申请人： Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

发明人： Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

IPC分类号： H01L21/306 ,  C23F1/08

CPC分类号： H01L21/30604 ,  H01L21/02019 ,  H01L21/6708

摘要： Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface.

摘要翻译： 公开了一种通过切割半导体晶锭获得的晶片的至少一侧的表面的平滑化方法。 在该方法中，根据晶片表面的突起施加流体，从而减少突起。 或者，将流体施加在晶片表面上，从而使晶片的整个表面平滑，同时减少晶片表面中的突起。