发明申请
- 专利标题: Molecular memory devices including solid-state dielectric layers and related methods
- 专利标题(中): 分子存储器件包括固态介质层和相关方法
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申请号: US11607503申请日: 2006-11-30
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公开(公告)号: US20070164374A1公开(公告)日: 2007-07-19
- 发明人: Veena Misra , Ritu Shrivastava , Zhong Chen , Guru Mathur
- 申请人: Veena Misra , Ritu Shrivastava , Zhong Chen , Guru Mathur
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L21/336
摘要:
According to some embodiments, an article of manufacture comprises a substrate; a molecular layer on the substrate comprising at least one charge storage molecule coupled to the substrate by a molecular linker; a solid barrier dielectric layer directly on the molecular layer; and a conductive layer directly on the solid barrier dielectric layer. In some embodiments, the solid barrier dielectric layer is configured to provide a voltage drop across the molecular layer that is greater than a voltage drop across the solid barrier dielectric layer when a voltage is applied to the conductive layer. In some embodiments, the molecular layer has a thickness greater than that of the solid barrier dielectric layer. The article of manufacture contains no electrolyte between the molecular layer and the conductive layer.
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