发明申请
- 专利标题： CMOS IMAGE SENSOR
- 专利标题（中）： CMOS图像传感器
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申请号： US11613106申请日： 2006-12-19
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公开(公告)号： US20070164389A1公开(公告)日： 2007-07-19
- 发明人: Tae Young Lee
- 申请人： Tae Young Lee
- 优先权： KR10-2005-0134451 20051229
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L31/0232 ; H01L31/06
摘要：
Embodiments relate to an image sensor that may use a passivation layer and a method for manufacturing the same. In embodiments, an image sensor may include a semiconductor substrate on which a photodiode and a transistor for the image sensor are formed, and a passivation layer formed over an entire surface of the semiconductor substrate. The passivation layer may include a first insulation layer made of TEOS, and a second insulation layer made of a nitride material formed on the first insulation layer.
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