发明申请
- 专利标题： NITROGEN-DOPED SILICON SUBSTANTIALLY FREE OF OXIDATION INDUCED STACKING FAULTS
- 专利标题（中）： 氮化硅不含氧化诱发堆积不良
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申请号： US11623142申请日： 2007-01-15
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公开(公告)号： US20070169683A1公开(公告)日： 2007-07-26
- 发明人: Hiroyo Haga , Takaaki Aoshima , Mohsen Banan
- 申请人： Hiroyo Haga , Takaaki Aoshima , Mohsen Banan
- 申请人地址： US MO St. Peters 63376
- 专利权人： MEMC ELECTRONIC MATERIALS, INC.
- 当前专利权人： MEMC ELECTRONIC MATERIALS, INC.
- 当前专利权人地址： US MO St. Peters 63376
- 优先权： JP2000-283033 20000919
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B21/06 ; C30B27/02 ; C30B19/00
摘要：
The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, and are nitrogen doped to stabilize oxygen precipitation nuclei therein.
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