发明申请
- 专利标题： Manufacturing method of aluminum nitride single crystal and aluminum nitride single crystal
- 专利标题（中）： 氮化铝单晶和氮化铝单晶的制造方法
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申请号： US11649137申请日： 2007-01-03
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公开(公告)号： US20070169689A1公开(公告)日： 2007-07-26
- 发明人: Yoshimasa Kobayashi , Naohito Yamada
- 申请人： Yoshimasa Kobayashi , Naohito Yamada
- 申请人地址： JP Nagoya-Shi
- 专利权人： NGK Insulators, Ltd.
- 当前专利权人： NGK Insulators, Ltd.
- 当前专利权人地址： JP Nagoya-Shi
- 优先权： JP2006-002744 20060110; JP2006-072933 20060316; JP2006-220981 20060814
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A seed crystal is formed of a rod-like aluminum nitride single crystal whose length direction is oriented to the c-axis direction. Exposed surface on the side portion thereof on which an aluminum nitride material is grown into a crystal has an inclination of 90° relative to a {0001} surface. With this configuration, an aluminum nitride single crystal with excellent crystallinity can be manufactured.
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