Ceramic chuck
    5.
    发明申请
    Ceramic chuck 审中-公开
    陶瓷卡盘

    公开(公告)号:US20050128674A1

    公开(公告)日:2005-06-16

    申请号:US11003285

    申请日:2004-12-03

    CPC分类号: H01L21/6831 H02N13/00

    摘要: An object of the present invention is to provide a ceramic chuck for mounting a wafer so that the number of particles adhered onto the wafer after chucking can be reduced while maintaining a desired Young's Modulus of the chuck. A ceramic chuck 1 has a surface layer 2 contacting a wafer “W” and a substrate portion 6. The surface layer 2 and substrate portion 6 are produced by co-sintering and the surface layer 2 has a porosity of 1% or higher and 10% or lower and larger than that of the substrate portion 6.

    摘要翻译: 本发明的目的是提供一种用于安装晶片的陶瓷卡盘,从而可以在保持卡盘的期望的杨氏模量的同时减少在夹紧之后粘附到晶片上的颗粒的数量。 陶瓷卡盘1具有与晶片“W”接触的表面层2和基板部分6.表面层2和基板部分6通过共烧结制成,表面层2的孔隙率为1%以上,10 %以下,大于基板部6的宽度。

    Fuel cell system
    6.
    发明申请
    Fuel cell system 审中-公开
    燃料电池系统

    公开(公告)号:US20050112446A1

    公开(公告)日:2005-05-26

    申请号:US10976859

    申请日:2004-11-01

    CPC分类号: H01M8/04119

    摘要: A fuel cell system is disclosed as having a water storage device 2 whose inside is provided with two partition walls 9, 10 to divide the same into three regions R1, R2, R3, and among these, a middle region R2 is provided with a water guide pipe 11 and a water return pipe 12 by which water is taken out of or returns to the region R2. Provided on the partition walls 9, 10 are communicating mechanisms 13 through which adjacent regions are brought into fluid communication. The communicating mechanisms 13 have structures that are operative to permit water to be taken out of or to be returned to the region R2 while blocking outflow of water from the region R2 to the other regions R1, R3.

    摘要翻译: 燃料电池系统被公开为具有储水装置2,其内部设置有两个分隔壁9,10,以将其分为三个区域R 1,R 2, ,R 3 3,其中,中间区域R 2 2设置有导水管11和回水管12,水从其中取出或返回 到区域R 2 2。 在隔壁9,10上设有连通机构13,相邻区域通过该连通机构13进行流体连通。 连通机构13具有可操作的结构,以允许将水从区域R 2 2中排出或返回到区域R 2,同时阻止水从区域R 2 2流出。 到其它区域R 1,R 3 3。

    Gas feed ceramic structure for semiconductor-producing apparatus
    7.
    发明授权
    Gas feed ceramic structure for semiconductor-producing apparatus 有权
    用于半导体制造装置的供气陶瓷结构

    公开(公告)号:US06471779B1

    公开(公告)日:2002-10-29

    申请号:US09558058

    申请日:2000-04-26

    IPC分类号: C23C1600

    摘要: A gas feed ceramic structure for feeding a gas into a semiconductor-producing apparatus, includes a planar substrate having a gas-feeding surface and a rear surface. The planar substrate has depressions formed from the rear surface toward the gas-feeding surface to define thin portions between the depressions and the gas-feed surface. Each of the thin portions includes a plurality of gas feed holes for feeding the gas to a side of the gas-feeding surface of the substrate, and one open end of the gas feed holes is provided at the gas-feeding surface of the substrate, and the other open end faces the depressions.

    摘要翻译: 用于将气体供给到半导体制造装置中的供气陶瓷结构体包括具有气体供给面和背面的平面基板。 平面基板具有从后表面朝向气体供给表面形成的凹陷,以限定凹部和气体供给表面之间的薄的部分。 每个薄部分包括用于将气体供给到基板的气体供给表面侧的多个气体供给孔,并且气体供给孔的一个开口端设置在基板的气体供给表面处, 另一个开口端面向凹陷处。

    Electrostatic chuck
    8.
    发明授权
    Electrostatic chuck 有权
    静电吸盘

    公开(公告)号:US6134096A

    公开(公告)日:2000-10-17

    申请号:US317772

    申请日:1999-05-18

    摘要: An electrostatic chuck for attracting an object for treatment. The electrostatic chuck includes a substrate, an insulating dielectric layer and at least one electrode located between the substrate and the insulating dielectric layer. The object is attracted onto the electrode via the insulating dielectric layer. The insulating dielectric layer is between 0.5 mm and 5.0 mm thick, and utilizes a gas-introducing hole to form a gas-diffusing depression on the side of an attractive surface, allowing for more uniform heat conduction. The gas-diffusing depression is between 100 um and 5.0 mm deep. The distance between the bottom surface of the gas-diffusing depression and an electrode may range from 500 .mu.m to 5 mm.

    摘要翻译: 用于吸引物体进行治疗的静电卡盘。 静电卡盘包括基板,绝缘电介质层和位于基板和绝缘介电层之间的至少一个电极。 物体经由绝缘介电层吸引到电极上。 绝缘介电层的厚度在0.5mm至5.0mm之间,利用气体导入孔在吸引面侧形成气体扩散凹部,能够进行更均匀的导热。 气体扩散凹陷深度在100μm到5.0mm之间。 气体扩散凹陷的底表面和电极之间的距离可以在500μm至5mm的范围内。

    Electrostatic chuck
    9.
    发明授权
    Electrostatic chuck 失效
    静电吸盘

    公开(公告)号:US5946183A

    公开(公告)日:1999-08-31

    申请号:US705988

    申请日:1996-08-30

    摘要: An electrostatic chuck for attracting an object to be treated, includes a substrate, an insulating dielectric layer and at least one electrode provided between the substrate and the insulating dielectric layer, wherein the above object is to be attracted onto the electrode via the insulating dielectric layer and an average thickness of the insulating dielectric layer is not less than 0.5 mm and not more than 5.0 mm.

    摘要翻译: 用于吸引待处理物体的静电卡盘包括基板,绝缘介电层和设置在基板和绝缘介电层之间的至少一个电极,其中上述目的经由绝缘介电层被吸引到电极上 并且绝缘介电层的平均厚度不小于0.5mm且不大于5.0mm。