发明申请
US20070170507A1 STRUCTURE AND METHOD FOR MANUFACTURING PLANAR STRAINED Si/SiGe SUBSTRATE WITH MULTIPLE ORIENTATIONS AND DIFFERENT STRESS LEVELS
审中-公开
用于制造具有多个方位和不同应力水平的平面应变Si / SiGe衬底的结构和方法
- 专利标题： STRUCTURE AND METHOD FOR MANUFACTURING PLANAR STRAINED Si/SiGe SUBSTRATE WITH MULTIPLE ORIENTATIONS AND DIFFERENT STRESS LEVELS
- 专利标题（中）： 用于制造具有多个方位和不同应力水平的平面应变Si / SiGe衬底的结构和方法
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申请号： US11693377申请日： 2007-03-29
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公开(公告)号： US20070170507A1公开(公告)日： 2007-07-26
- 发明人: Huilong Zhu , Bruce Doris , Philip Oldiges , Meikei Ieong , Min Yang , Huajie Chen
- 申请人： Huilong Zhu , Bruce Doris , Philip Oldiges , Meikei Ieong , Min Yang , Huajie Chen
- 申请人地址： US NY Armonk 10504
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk 10504
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L27/01 ; H01L31/0392
摘要：
The present invention provides a method of forming a semiconducting substrate including the steps of providing an initial structure having first device region comprising a first orientation material and a second device region having a second orientation material; forming a first concentration of lattice modifying material atop the first orientation material; forming a second concentration of the lattice modifying material atop the second orientation material; intermixing the first concentration of lattice modifying material with the first orientation material to produce a first lattice dimension surface and the second concentration of lattice modifying material the second orientation material to produce a second lattice dimension surface; and forming a first strained semiconducting layer atop the first lattice dimension surface and a second strained semiconducting layer atop the second lattice dimension surface.