Invention Application
US20070171696A1 Recursive device for switching over a high potential greater than a nominal potential of a technology in which the device is made and related system and method 有权
用于切换高于设备制造技术的标称电位的高电位的递归设备及相关系统和方法

  • Patent Title: Recursive device for switching over a high potential greater than a nominal potential of a technology in which the device is made and related system and method
  • Patent Title (中): 用于切换高于设备制造技术的标称电位的高电位的递归设备及相关系统和方法
  • Application No.: US11643009
    Application Date: 2006-12-19
  • Publication No.: US20070171696A1
    Publication Date: 2007-07-26
  • Inventor: Cyrille DrayStephane Gamet
  • Applicant: Cyrille DrayStephane Gamet
  • Assignee: STMicroelectronics S.A.
  • Current Assignee: STMicroelectronics S.A.
  • Priority: FR0512871 20051219
  • Main IPC: G11C11/22
  • IPC: G11C11/22
Recursive device for switching over a high potential greater than a nominal potential of a technology in which the device is made and related system and method
Abstract:
An embodiment of the invention pertains to an nth order selector switch device comprising: a first arm comprising n transistors series-connected between a first input to which a 0-ranking potential is applied, and an output; and a second arm comprising n transistors series-connected between a second input to which a 0-ranking potential is applied, and the output. The device according to the invention also comprises: a means to produce n−1 potentials ranked 1 to n−1 included between the potential ranked 0 and the potential ranked n; and a driving means for the production, from the n+1 potentials ranked 0 to n, of control signals suited to driving the gates of the transistors of the first arm and the gates of the transistors of the second arm so that the transistors of one of the arms are on and the transistors of the other arm are off depending on the value of the n-ranking potential relative to the value of the 0-ranking potential.
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