发明申请
- 专利标题: ASYMMETRIC FOUR-TRANSISTOR SRAM CELL
- 专利标题(中): 不对称四极晶体管SRAM单元
-
申请号: US11621679申请日: 2007-01-10
-
公开(公告)号: US20070177419A1公开(公告)日: 2007-08-02
- 发明人: Manoj Sachdev , Mohammad Sharifkhani
- 申请人: Manoj Sachdev , Mohammad Sharifkhani
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
An asymmetric Static Random Access Memory (SRAM) cell is provided. The SRAM cell comprises first and second storage nodes, drive transistors and access transistors. The first and second storage nodes are configured to store complementary voltages. The drive transistors are configured to selectively couple each of the first and second storage nodes to corresponding high and low voltage power supplies, and maintain a first logic state through a feedback loop. The access transistors are configured to selectively couple each of the first and second storage nodes to corresponding first and second bit-lines and maintain a second logic state through relative transistor leakage currents. A method for reading from and writing to the SRAM cell are also provided.
公开/授权文献
- US07643329B2 Asymmetric four-transistor SRAM cell 公开/授权日:2010-01-05