发明申请
- 专利标题: Method of manufacturing a semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US11649297申请日: 2007-01-04
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公开(公告)号: US20070184634A1公开(公告)日: 2007-08-09
- 发明人: Shinya Suzuki , Toshiaki Sawada , Masatoshi Iwasaki
- 申请人: Shinya Suzuki , Toshiaki Sawada , Masatoshi Iwasaki
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 优先权: JP2006-30756 20060208
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A semiconductor device manufacturing method is disclosed wherein a semiconductor integrated circuit is formed in each of plural semiconductor chip regions of a semiconductor wafer which regions are to become semiconductor chips later and then the semiconductor wafer is cut along scribing regions each provided between adjacent semiconductor chip regions. The semiconductor chip regions are each in a rectangular shape having long sides and short sides. The scribing regions include a first scribing region in contact with the short sides and a second scribing region in contact with the long sides. The width of the second scribing region is smaller than the width of the first scribing region. In a photolithography process, first and second alignment patterns for making alignment in both X and Y directions are all formed in the first scribing region and not formed in the second scribing region. Both improvement of the alignment accuracy and reduction of the semiconductor device manufacturing cost can be attained.
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