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发明申请
US20070190721A1 Semiconductor memory device having an alloy metal gate electrode and method of manufacturing the same 审中-公开
具有合金金属栅电极的半导体存储器件及其制造方法

Semiconductor memory device having an alloy metal gate electrode and method of manufacturing the same
摘要：
A semiconductor memory device having an alloy gate electrode layer and method of manufacturing the same are provided. The semiconductor memory device may include a semiconductor substrate having a first impurity region and a second impurity region. The semiconductor memory device may include a gate structure formed on the semiconductor substrate and contacting the first and second impurity regions. The gate structure may include an alloy gate electrode layer formed of a first metal and a second metal. The first metal may be a noble metal. The second metal may include at least one of aluminum (Al) and titanium (Ti), gallium (Ga), indium (In), tin (Sb), thallium (Tl), bismuth (Bi) and lead (Pb).
摘要（中）：

提供了具有合金栅电极层的半导体存储器件及其制造方法。 半导体存储器件可以包括具有第一杂质区和第二杂质区的半导体衬底。 半导体存储器件可以包括形成在半导体衬底上并与第一和第二杂质区接触的栅极结构。 栅极结构可以包括由第一金属和第二金属形成的合金栅极电极层。 第一种金属可能是贵金属。 第二金属可以包括铝（Al）和钛（Ti），镓（Ga），铟（In），锡（Sb），铊（Tl），铋（Bi）和铅（Pb）中的至少一种。

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