发明申请
US20070190906A1 POLISHING MEDIUM FOR CHEMICAL-MECHANICAL POLISHING, AND POLISHING METHOD
审中-公开
用于化学机械抛光的抛光介质和抛光方法
- 专利标题： POLISHING MEDIUM FOR CHEMICAL-MECHANICAL POLISHING, AND POLISHING METHOD
- 专利标题（中）： 用于化学机械抛光的抛光介质和抛光方法
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申请号： US11737502申请日： 2007-04-19
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公开(公告)号： US20070190906A1公开(公告)日： 2007-08-16
- 发明人: TAKESHI UCHIDA , Yasuo Kamigata , Hiroki Terasaki , Yasushi Kurata , Tetsuya Hoshino , Akiko Igarashi
- 申请人： TAKESHI UCHIDA , Yasuo Kamigata , Hiroki Terasaki , Yasushi Kurata , Tetsuya Hoshino , Akiko Igarashi
- 优先权： JPHEI11-239777 19990826; JPHEI11-239778 19990826; JPHEI11-239779 19990826; JPHEI11-239780 19990826; JPHEI11-239781 19990826
- 主分类号： B24B1/00
- IPC分类号： B24B1/00 ; B24C1/00
摘要：
This invention provides a polishing medium for CMP, comprising an oxidizing agent, a metal-oxide-dissolving agent, a protective-film-forming agent, a water-soluble polymer, and water, and a polishing method making use of this polishing medium. Also, it is preferable that the water-soluble polymer has a weight-average molecular weight of 500 or more and the polishing medium has a coefficient of kinetic friction of 0.25 or more, a Ubbelode's viscosity of from 0.95 mPa·s (0.95 cP) to 1.5 mPa·s (1.5 cP) and a point-of-inflection pressure of 5 kPa (50 gf/cm2).