发明申请
US20070193512A1 Plasma generating method, plasma generating apparatus, and plasma processing apparatus
审中-公开
等离子体产生方法，等离子体产生装置和等离子体处理装置
- 专利标题： Plasma generating method, plasma generating apparatus, and plasma processing apparatus
- 专利标题（中）： 等离子体产生方法，等离子体产生装置和等离子体处理装置
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申请号： US11707862申请日： 2007-02-20
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公开(公告)号： US20070193512A1公开(公告)日： 2007-08-23
- 发明人: Hiroshige Deguchi , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
- 申请人： Hiroshige Deguchi , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
- 专利权人： NISSIN ELECTRIC CO., LTD. and EMD CORPORATION
- 当前专利权人： NISSIN ELECTRIC CO., LTD. and EMD CORPORATION
- 优先权： JPP.2006-042316 20060220
- 主分类号： C23C16/00
- IPC分类号： C23C16/00
摘要：
One or more high-frequency antennas is allocated to and disposed in one cubic space C having a side of 0.4 [m] in a plasma generating chamber 1 or in each of plural cubic spaces C, each having a side of 0.4 [m], adjacent ones of the plural cubic spaces being continuous to each other without forming a gap therebetween. The total length L [m] of the high-frequency antennas in each of the cubic spaces C is set in a range which satisfies relationships of (0.2/P)
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