Invention Application
US20070194295A1 Semiconductor device of Group III nitride semiconductor having oxide protective insulating film formed on part of the active region
审中-公开
具有在活性区域的一部分上形成的具有氧化物保护绝缘膜的III族氮化物半导体的半导体装置
- Patent Title: Semiconductor device of Group III nitride semiconductor having oxide protective insulating film formed on part of the active region
- Patent Title (中): 具有在活性区域的一部分上形成的具有氧化物保护绝缘膜的III族氮化物半导体的半导体装置
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Application No.: US11785799Application Date: 2007-04-20
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Publication No.: US20070194295A1Publication Date: 2007-08-23
- Inventor: Katsunori Nishii , Yoshito Ikeda , Kaoru Inoue
- Applicant: Katsunori Nishii , Yoshito Ikeda , Kaoru Inoue
- Applicant Address: JP Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JP Osaka
- Priority: JP2002-157830 20020530
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
An active region formed of a Group III nitride semiconductor is formed on a substrate. Then, an electrode is formed on the active region and a protective insulating film is formed on a part of the active region located in the peripheral portion of the electrode by oxidizing the Group III nitride semiconductor.
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