发明申请
US20070194373A1 CMOS STRUCTURE AND METHOD INCLUDING MULTIPLE CRYSTALLOGRAPHIC PLANES
有权
CMOS结构和方法,包括多个水晶平面图
- 专利标题: CMOS STRUCTURE AND METHOD INCLUDING MULTIPLE CRYSTALLOGRAPHIC PLANES
- 专利标题(中): CMOS结构和方法,包括多个水晶平面图
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申请号: US11276274申请日: 2006-02-22
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公开(公告)号: US20070194373A1公开(公告)日: 2007-08-23
- 发明人: Brent Anderson , Edward Nowak , Jed Rankin
- 申请人: Brent Anderson , Edward Nowak , Jed Rankin
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
A complementary metal oxide semiconductor (CMOS) structure includes a semiconductor substrate having first mesa having a first ratio of channel effective horizontal surface area to channel effective vertical surface area. The CMOS structure also includes a second mesa having a second ratio of the same surface areas that is greater than the first ratio. A first device having a first polarity uses the first mesa as a channel and benefits from the enhanced vertical crystallographic orientation. A second device having a second polarity different from the first polarity uses the second mesa as a channel and benefits from the enhanced horizontal crystallographic orientation.