发明申请
- 专利标题： Amorphous Oxide And Thin Film Transistor
- 专利标题（中）： 无定形氧化物和薄膜晶体管
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申请号： US10592431申请日： 2005-02-28
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公开(公告)号： US20070194379A1公开(公告)日： 2007-08-23
- 发明人: Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
- 申请人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
- 申请人地址： JP Kawaguchi-shi 332-0012
- 专利权人： JAPAN SCIENCE AND TECHNOLOGY AGENCY
- 当前专利权人： JAPAN SCIENCE AND TECHNOLOGY AGENCY
- 当前专利权人地址： JP Kawaguchi-shi 332-0012
- 优先权： JP2004-071477 20040312; JP2004-325938 20041110
- 国际申请： PCT/JP05/03273 WO 20050228
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
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