发明申请
- 专利标题: Downward type MEMS switch and method for fabricating the same
- 专利标题(中): 向下型MEMS开关及其制造方法
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申请号: US11581435申请日: 2006-10-17
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公开(公告)号: US20070195464A1公开(公告)日: 2007-08-23
- 发明人: Sang-wook Kwon , Jong-seok Kim , In-sang Song , Sang-hun Lee , Dong-kyun Kim , Jung-han Choi , Young-tack Houng , Che-heung Kim
- 申请人: Sang-wook Kwon , Jong-seok Kim , In-sang Song , Sang-hun Lee , Dong-kyun Kim , Jung-han Choi , Young-tack Houng , Che-heung Kim
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 优先权: KR2006-16308 20060220
- 主分类号: G11B5/48
- IPC分类号: G11B5/48
摘要:
A downward type micro electro mechanical system (EMS) switch and a method of fabricating the same is provided. The downward type MEMS switch includes first and second cavities formed in a substrate, first and second actuators formed on upper portions of the first and second cavities, first and second fixing lines formed on an upper surface of the substrate and not overlapped with the first and second cavities, and a contact pad which is spaced apart at a predetermined distance from surfaces of the first fixing line and the second fixing line but which can be contacted with the first fixing line and the second fixing line when the first actuator and the second actuator are driven. The contact pad, which is actuated downward by piezoelectricity, is fabricated as it shares a layer with a RF signal line, after the RF signal line is fabricated.
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