发明申请
- 专利标题: Toggle-Type Magnetoresistive Random Access Memory
- 专利标题(中): 切换式磁阻随机存取存储器
-
申请号: US10591617申请日: 2005-03-02
-
公开(公告)号: US20070195585A1公开(公告)日: 2007-08-23
- 发明人: Noboru Sakimura , Tadahiko Sugibayashi , Takeshi Honda
- 申请人: Noboru Sakimura , Tadahiko Sugibayashi , Takeshi Honda
- 申请人地址: JP TOKYO
- 专利权人: NEC CORPORATION
- 当前专利权人: NEC CORPORATION
- 当前专利权人地址: JP TOKYO
- 优先权: JP2004-061595 20040305
- 国际申请: PCT/JP05/03482 WO 20050302
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A MRAM includes: first wirings, second wirings, memory cells, a second sense amplifier and a first sense amplifier. The first wirings and second wirings are extended in a first and a second direction. The memory cells are placed correspondingly to positions where the first wirings are crossed with the second wirings. The second sense amplifier detects a state of a reference cell on the basis of an output from the reference cell provided by corresponding to a reference wiring. The first sense amplifier (2) detects a state of the memory cell on the basis of an output from the reference cell and an output from the memory cell. The memory cell includes a magnetic tunneling junction element having a laminated free layer. The magnetic tunneling junction element has a magnetization easy axis direction which is different from the first and second directions.
公开/授权文献
- US07440314B2 Toggle-type magnetoresistive random access memory 公开/授权日:2008-10-21