发明申请
- 专利标题: Silicon carbide dimpled substrate
- 专利标题(中): 碳化硅凹凸基板
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申请号: US11651528申请日: 2007-01-10
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公开(公告)号: US20070200116A1公开(公告)日: 2007-08-30
- 发明人: Christopher Harris , Cem Basceri , Thomas Gehrke , Cengiz Balkas
- 申请人: Christopher Harris , Cem Basceri , Thomas Gehrke , Cengiz Balkas
- 主分类号: H01L31/0312
- IPC分类号: H01L31/0312
摘要:
A dimpled substrate and method of making including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface. Active epitaxial layers are formed on the first main surface of the substrate. Dimples are formed as extending from the second main surface into the substrate toward the first main surface. An electrical contact of low resistance material is disposed on the second main surface and within the dimples. A back contact of low resistance and low loss is thus provided while maintaining the substrate as an effective heat sink.
公开/授权文献
- US08664664B2 Silicon carbide dimpled substrate 公开/授权日:2014-03-04
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