发明申请
- 专利标题： Double density NROM with nitride strips (DDNS)
- 专利标题（中）： 双重密度NROM与氮化物条（DDNS）
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申请号： US11646430申请日： 2006-12-28
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公开(公告)号： US20070200180A1公开(公告)日： 2007-08-30
- 发明人: Rustom Irani , Boaz Eitan , Ilan Bloom , Assaf Shappir
- 申请人： Rustom Irani , Boaz Eitan , Ilan Bloom , Assaf Shappir
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
An NVM cell such as an NROM cell is formed using a portion of one ONO stack and an adjacent portion of a neighboring NROM stack. A gate structure is formed between (and atop) the two ONO portions, or “strips” (or “stripes”). This provides having two physically separated charge storage regions (nitride “strips”, or “stripes”) in each memory cell.
公开/授权文献
- US07638835B2 Double density NROM with nitride strips (DDNS) 公开/授权日：2009-12-29
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