发明申请
- 专利标题： Semiconductor device and method of manufacturing semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11709496申请日： 2007-02-22
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公开(公告)号： US20070200189A1公开(公告)日： 2007-08-30
- 发明人: Atsushi Iwasaki , Hiroaki Takasu
- 申请人： Atsushi Iwasaki , Hiroaki Takasu
- 优先权： JP2006-048395 20060224
- 主分类号： H01L27/14
- IPC分类号： H01L27/14
摘要：
Provided is a semiconductor device for performing photoelectric conversion of incident light, including: a p-type substrate (1), an n-type well (2) having a predetermined depth and formed in a predetermined region of the p-type substrate (1), and a depletion layer generated at a junction interface between the p-type substrate (1) and the n-type well (2). In the trenches (22) having a depth larger than that of a depletion layer (K1) generated on a bottom side of the n-type well (2) and a width larger than that of depletion layers (K2, K3) generated on sides of the n-type well (2) are provided so as to remove junction interfaces (J2, J3) on the sides of the n-type well (2), and an insulating layer (21) is buried in the trenches (22).
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