Invention Application
US20070202641A1 TRANSISTOR DEVICE HAVING AN INCREASED THRESHOLD STABILITY WITHOUT DRIVE CURRENT DEGRADATION
有权
具有无驱动电流降低的增加的阈值稳定性的晶体管器件
- Patent Title: TRANSISTOR DEVICE HAVING AN INCREASED THRESHOLD STABILITY WITHOUT DRIVE CURRENT DEGRADATION
- Patent Title (中): 具有无驱动电流降低的增加的阈值稳定性的晶体管器件
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Application No.: US11551263Application Date: 2006-10-20
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Publication No.: US20070202641A1Publication Date: 2007-08-30
- Inventor: Andy Wei , Thorsten Kammler , Jan Hoentschel , Manfred Horstmann
- Applicant: Andy Wei , Thorsten Kammler , Jan Hoentschel , Manfred Horstmann
- Priority: DE102006009226.0 20060228
- Main IPC: H01L21/337
- IPC: H01L21/337 ; H01L21/22
Abstract:
By removing a portion of a halo region or by avoiding the formation of the halo region within the extension region, which may be subsequently formed on the basis of a re-grown semiconductor material, the threshold roll off behavior may be significantly improved, wherein an enhanced current drive capability may simultaneously be achieved.
Public/Granted literature
- US07402497B2 Transistor device having an increased threshold stability without drive current degradation Public/Granted day:2008-07-22
Information query
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