MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Invention Application

US20070202682A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开

Title translation: 半导体器件的制造方法

Please log in to see more content

Patent Title: MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Patent Title (中): 半导体器件的制造方法
Application No.: US11626541

Application Date: 2007-01-24
Publication No.: US20070202682A1

Publication Date: 2007-08-30
Inventor: Kenichi YAMAMOTO , Toshinori Kawamura , Haruo Akahoshi
Applicant: Kenichi YAMAMOTO , Toshinori Kawamura , Haruo Akahoshi
Priority: JP2006-48785 20060224
Main IPC: H01L21/44
IPC: H01L21/44

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Abstract:

Improvement in shock-resistant strength of a soldered joint is aimed at, and the variation in the plating film formed on an electrode pad is reduced.In the step which forms a plating film (for example, Ni film) by an electrolytic plating method on the surface of an electrode pad, the first layer is formed in the front surface of the electrode pad with the first current density, and the second layer is formed in the front surface of the first layer with the second current density higher than the first current density after that.

Abstract(Chinese):

针对焊接接头的耐冲击强度的提高，电极焊盘上形成的电镀膜的变化减小。在电极焊盘的表面上通过电解电镀法形成电镀膜（例如Ni膜）的步骤中，在电极焊盘的前表面形成有第一电流密度的第一层，第二层在第一层的前表面形成有第二电流密度高于之后的第一电流密度的层。

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的