发明申请
- 专利标题： InN/InP/TiO2 photosensitized electrode
- 专利标题（中）： InN / InP / TiO2光敏电极
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申请号： US11586000申请日： 2006-10-25
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公开(公告)号： US20070204905A1公开(公告)日： 2007-09-06
- 发明人: Ming-Chang Lin , Yen-Chang Tzeng , Shan-Ming Lan , Chi-Shen Lee , Tsun-Neng Yang , Tsong-Yang Wei , Jyh-Perng Chiu , Li-Fu Lin , Der-Jhy Shieh , Ming-Chao Kuo
- 申请人： Ming-Chang Lin , Yen-Chang Tzeng , Shan-Ming Lan , Chi-Shen Lee , Tsun-Neng Yang , Tsong-Yang Wei , Jyh-Perng Chiu , Li-Fu Lin , Der-Jhy Shieh , Ming-Chao Kuo
- 专利权人： Atomic Energy Council - Institute of Nuclear Energy Research
- 当前专利权人： Atomic Energy Council - Institute of Nuclear Energy Research
- 优先权： TW095107062 20060302
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L31/00
摘要：
The present invention is a photosensitized electrode which absorbs sunlight to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.
公开/授权文献
- US07655575B2 InN/InP/TiO2 photosensitized electrode 公开/授权日：2010-02-02
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