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    In-situ Gettering Method for Removing Metal Impurities from the Surface and Interior of a Upgraded Metallurgical Grade Silicon Wafer
    1.
    发明申请
    In-situ Gettering Method for Removing Metal Impurities from the Surface and Interior of a Upgraded Metallurgical Grade Silicon Wafer 失效
    用于从表面和内部升级的冶金级硅晶片上去除金属杂质的原位吸气方法

    公开(公告)号：US20130149843A1

    公开(公告)日：2013-06-13

    申请号：US13313124

    申请日：2011-12-07

    申请人： Jin-Jang Jheng ,  Tsun-Neng Yang ,  Chin-Chen Chiang

    发明人： Jin-Jang Jheng ,  Tsun-Neng Yang ,  Chin-Chen Chiang

    IPC分类号： H01L21/322

    CPC分类号： H01L21/3221

    摘要： An in-situ gettering method for removing impurities from the surface and interior of a upgraded metallurgical grade silicon wafer is continuously conducted in a reaction chamber. Chloride gas is mixed with carrier gas. The gaseous mixture is used to clean the surface of the silicon wafer. Then, the gaseous mixture is used to form a porous structure on the surface of the silicon wafer before hot annealing is executed. Finally, the gaseous mixture is used to execute hot etching on the surface of the silicon wafer and remove the porous structure from the surface of the silicon wafer. As the chloride gas is used to clean the surface of the silicon wafer and form the porous structure on the surface of the silicon wafer, external gettering is improved. Moreover, interstitial-type metal impurities are effectively removed from the interior of the silicon wafer.

    摘要翻译： 在反应室中连续进行用于从升级的冶金级硅晶片的表面和内部除去杂质的原位吸气方法。 氯化物气与载气混合。 气态混合物用于清洁硅晶片的表面。 然后，在执行热退火之前，气态混合物用于在硅晶片的表面上形成多孔结构。 最后，气态混合物用于在硅晶片的表面上执行热蚀刻，并从硅晶片的表面去除多孔结构。 由于氯化物气体用于清洁硅晶片的表面，并且在硅晶片的表面上形成多孔结构，所以外部吸气性得到改善。 此外，有效地从硅晶片的内部除去间隙型金属杂质。

    Method of reducing metal impurities of upgraded metallurgical grade silicon wafer by using epitaxial silicon film
    5.
    发明授权
    Method of reducing metal impurities of upgraded metallurgical grade silicon wafer by using epitaxial silicon film 有权
    通过使用外延硅膜降低升级冶金级硅晶片的金属杂质的方法

    公开(公告)号：US07972942B1

    公开(公告)日：2011-07-05

    申请号：US12887665

    申请日：2010-09-22

    申请人： Tsun-Neng Yang

    发明人： Tsun-Neng Yang

    IPC分类号： H01L21/322

    CPC分类号： H01L21/3221 ,  Y10S257/913

    摘要： Metal impurities of an upgraded metallurgical grade (UMG) silicon (Si) wafer are reduced. The UMG Si wafer having a 5N (99.999%) purity is chosen to grow a high-quality epitaxial Si thin film through atmospheric pressure chemical vapor deposition (APCVD). Through heat treating diffusion, the epitaxial Si film is used to form sink positions for the metal impurities in the UMG Si wafer. By using concentration gradient, temperature gradient and interface defect, individual and comprehensive effects are built for enhancing purity of the UMG Si wafer from 5N to 6N. Thus, a low-cost Si wafer can be fabricated for Si-based solar cell through a simple, fast and effective method.

    摘要翻译： 升级冶金级（UMG）硅（Si）晶片的金属杂质减少。 选择具有5N（99.999％）纯度的UMG Si晶片，以通过大气压化学气相沉积（APCVD）生长高品质外延Si薄膜。 通过热处理扩散，外延Si膜用于形成UMG Si晶片中的金属杂质的吸收位置。 通过使用浓度梯度，温度梯度和界面缺陷，建立了个体和综合效应，以提高UMG Si晶片的5N至6N的纯度。 因此，可以通过简单，快速和有效的方法制造用于Si基太阳能电池的低成本Si晶片。

    Method for making solar cells with sensitized quantum dots in the form of nanometer metal particles
    6.
    发明授权
    Method for making solar cells with sensitized quantum dots in the form of nanometer metal particles 有权
    用纳米金属颗粒形式制造具有敏化量子点的太阳能电池的方法

    公开(公告)号：US07915068B2

    公开(公告)日：2011-03-29

    申请号：US12076244

    申请日：2008-03-14

    申请人： Meng-Chu Chen ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Zhen-Yu Li ,  Yu-Han Su ,  Chien-Te Ku ,  Yu-Hsiang Huang

    发明人： Meng-Chu Chen ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Zhen-Yu Li ,  Yu-Han Su ,  Chien-Te Ku ,  Yu-Hsiang Huang

    IPC分类号： H01L21/00 ,  H01L27/14 ,  H01L31/0232

    CPC分类号： H01G9/20 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/775 ,  Y10S977/776 ,  Y10S977/777 ,  Y10S977/81 ,  Y10S977/948

    摘要： There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film.

    摘要翻译： 公开了以纳米金属晶体的形式制造具有致敏量子点的太阳能电池的方法。 首先，提供第一基板。 然后，在第一基板的一侧上生长硅基膜。 执行图案掩模处理以蚀刻硅基膜的区域。 在从硅基膜暴露的第一基板的区域上设置纳米金属颗粒。 金属电极附接到第一基板的相对侧。 提供第二基板。 在第二基板上生长透明导电膜。 在透明导电膜上生长金属催化膜。 第二基板，透明导电膜和金属催化膜一起形成层压体。 将层压体倒置并设置在第一基板上。 最后，在第一基板和金属催化膜之间提供电解质。

    Spark-gap white fluorescent lamp having silicon quantum dots and preparing method thereof
    8.
    发明授权
    Spark-gap white fluorescent lamp having silicon quantum dots and preparing method thereof 失效
    具有硅量子点的火花间隙白色荧光灯及其制备方法

    公开(公告)号：US07579770B2

    公开(公告)日：2009-08-25

    申请号：US11510825

    申请日：2006-08-28

    申请人： Tsun-Neng Yang ,  Wei-Yang Ma

    发明人： Tsun-Neng Yang ,  Wei-Yang Ma

    IPC分类号： H01J1/62

    CPC分类号： C09K11/59 ,  C09K11/02 ,  H01J61/70 ,  H05B33/14 ,  Y02B20/181

    摘要： A white fluorescent lamp is prepared with a substrate and a high voltage circuit. The substrate has a fluorescent layer with silicon quantum dots. The lamp generates a white light by exciting the substrate with the circuit through a spark gap. A photoelectronic conversion is improved and a cost is lowered by using a cheap material as silicon.

    摘要翻译： 白色荧光灯由衬底和高压电路制成。 衬底具有带有硅量子点的荧光层。 该灯通过使电路通过火花隙激发衬底而产生白光。 通过使用便宜的材料作为硅，改善了光电转换并降低了成本。

    Method for fabricating crystalline silicon thin films
    9.
    发明授权
    Method for fabricating crystalline silicon thin films 失效
    制造晶体硅薄膜的方法

    公开(公告)号：US07485560B2

    公开(公告)日：2009-02-03

    申请号：US11603043

    申请日：2006-11-22

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan

    IPC分类号： H01L21/44

    CPC分类号： C23C16/24 ,  C23C16/56

    摘要： An amorphous silicon (Si) film is taken to form a metal silicide of Si—Al(aluminum) under a high temperature. Al atoms is diffused into the amorphous Si film for forming the metal silicide of Si—Al as nucleus site. Then through heating and annealing, a microcrystalline or nano-crystalline silicon thin film is obtained. The whole process is only one process and is done in only one reacting chamber.

    摘要翻译： 取非晶硅（Si）膜在高温下形成Si-Al（铝）的金属硅化物。 Al原子扩散到非晶Si膜中，用于形成Si-Al的金属硅化物作为核部位。 然后通过加热和退火，获得微晶或纳米晶硅薄膜。 整个过程只是一个过程，只在一个反应​​室中完成。