发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US11639278申请日: 2006-12-15
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公开(公告)号: US20070205794A1公开(公告)日: 2007-09-06
- 发明人: Shusaku Ota , Hiroaki Segawa , Masanori Hirofuji
- 申请人: Shusaku Ota , Hiroaki Segawa , Masanori Hirofuji
- 优先权: JP2006-046368 20060223
- 主分类号: G01R31/26
- IPC分类号: G01R31/26
摘要:
A power supply potential and a ground potential are supplied to a test-use power supply pad and a test-use ground pad, respectively. The power supply potential supplied to the test-use power supply pad is transferred to power supply lines and then to each circuit block via a test-use power supply line and a potential transfer circuit including a diode device. A voltage drop is caused by each of the diode devices. To cope with the voltage drop, however, respective sizes of the diode devices and resistance components of the potential transfer circuits are configured so that a uniform voltage drop is generated at each of the power supply lines.
公开/授权文献
- US07256604B1 Semiconductor device 公开/授权日:2007-08-14
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