发明申请
- 专利标题： Insulation structure for high temperature conditions and manufacturing method thereof
- 专利标题（中）： 高温条件的绝缘结构及其制造方法
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申请号： US11723236申请日： 2007-03-19
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公开(公告)号： US20070215894A1公开(公告)日： 2007-09-20
- 发明人: Young Ki Lee , Seog Moon Choi , Sang Hyun Shin
- 申请人： Young Ki Lee , Seog Moon Choi , Sang Hyun Shin
- 专利权人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 优先权： KR10-2006-0025454 20060320
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/00
摘要：
An insulation structure for high temperature conditions and a manufacturing method thereof. In the insulation structure, a substrate has a conductive pattern formed on at least one surface thereof for electrical connection of a device. A metal oxide layer pattern is formed on a predetermined portion of the conductive pattern by anodization, the metal oxide layer pattern made of one selected from a group consisting of Al, Ti and Mg.